Design and performance of InP/GaInAs/InP abrupt DHBTs

D. Cohen Elias, S. Kraus, A. Gavrilov, S. Cohen, N. Buadana, V. Sidorov, D. Ritter

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We discuss the field collapse threshold in abrupt DHBTs in which the barrier between the base and the collector is eliminated by delta doping. A DHBT with 150 nm thick collector operating at a current density of 4 mA/μm 2 is presented. We show theoretically that the carrier density at the onset of the filed collapse effect can be doubled by inserting an additional delta doped layer at the center of the collector.

Original languageEnglish
Title of host publication2005 International Conference on Indium Phosphide and Related Materials
Pages449-451
Number of pages3
DOIs
StatePublished - 2005
Externally publishedYes
Event2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom
Duration: 8 May 200512 May 2005

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
Volume2005
ISSN (Print)1092-8669

Conference

Conference2005 International Conference on Indium Phosphide and Related Materials
Country/TerritoryUnited Kingdom
CityGlasgow, Scotland
Period8/05/0512/05/05

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