Design and performance of InP/GaInAs/InP abrupt DHBTs

D. Cohen Elias; S. Kraus; A. Gavrilov; S. Cohen; N. Buadana; V. Sidorov; D. Ritter

doi:10.1109/ICIPRM.2005.1517528

Design and performance of InP/GaInAs/InP abrupt DHBTs

D. Cohen Elias, S. Kraus, A. Gavrilov, S. Cohen, N. Buadana, V. Sidorov, D. Ritter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We discuss the field collapse threshold in abrupt DHBTs in which the barrier between the base and the collector is eliminated by delta doping. A DHBT with 150 nm thick collector operating at a current density of 4 mA/μm ² is presented. We show theoretically that the carrier density at the onset of the filed collapse effect can be doubled by inserting an additional delta doped layer at the center of the collector.

Original language	English
Title of host publication	2005 International Conference on Indium Phosphide and Related Materials
Pages	449-451
Number of pages	3
DOIs	https://doi.org/10.1109/ICIPRM.2005.1517528
State	Published - 2005
Externally published	Yes
Event	2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom Duration: 8 May 2005 → 12 May 2005

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Volume	2005
ISSN (Print)	1092-8669

Conference

Conference	2005 International Conference on Indium Phosphide and Related Materials
Country/Territory	United Kingdom
City	Glasgow, Scotland
Period	8/05/05 → 12/05/05

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10.1109/ICIPRM.2005.1517528

Cite this

Cohen Elias, D., Kraus, S., Gavrilov, A., Cohen, S., Buadana, N., Sidorov, V., & Ritter, D. (2005). Design and performance of InP/GaInAs/InP abrupt DHBTs. In 2005 International Conference on Indium Phosphide and Related Materials (pp. 449-451). [1517528] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; Vol. 2005). https://doi.org/10.1109/ICIPRM.2005.1517528

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title = "Design and performance of InP/GaInAs/InP abrupt DHBTs",

abstract = "We discuss the field collapse threshold in abrupt DHBTs in which the barrier between the base and the collector is eliminated by delta doping. A DHBT with 150 nm thick collector operating at a current density of 4 mA/μm 2 is presented. We show theoretically that the carrier density at the onset of the filed collapse effect can be doubled by inserting an additional delta doped layer at the center of the collector.",

author = "{Cohen Elias}, D. and S. Kraus and A. Gavrilov and S. Cohen and N. Buadana and V. Sidorov and D. Ritter",

year = "2005",

doi = "10.1109/ICIPRM.2005.1517528",

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series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

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Cohen Elias, D, Kraus, S, Gavrilov, A, Cohen, S, Buadana, N, Sidorov, V & Ritter, D 2005, Design and performance of InP/GaInAs/InP abrupt DHBTs. in 2005 International Conference on Indium Phosphide and Related Materials., 1517528, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, vol. 2005, pp. 449-451, 2005 International Conference on Indium Phosphide and Related Materials, Glasgow, Scotland, United Kingdom, 8/05/05. https://doi.org/10.1109/ICIPRM.2005.1517528

Design and performance of InP/GaInAs/InP abrupt DHBTs. / Cohen Elias, D.; Kraus, S.; Gavrilov, A.; Cohen, S.; Buadana, N.; Sidorov, V.; Ritter, D.

2005 International Conference on Indium Phosphide and Related Materials. 2005. p. 449-451 1517528 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Cohen Elias, D.

AU - Kraus, S.

AU - Gavrilov, A.

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AU - Buadana, N.

AU - Sidorov, V.

AU - Ritter, D.

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AB - We discuss the field collapse threshold in abrupt DHBTs in which the barrier between the base and the collector is eliminated by delta doping. A DHBT with 150 nm thick collector operating at a current density of 4 mA/μm 2 is presented. We show theoretically that the carrier density at the onset of the filed collapse effect can be doubled by inserting an additional delta doped layer at the center of the collector.

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BT - 2005 International Conference on Indium Phosphide and Related Materials

Y2 - 8 May 2005 through 12 May 2005

ER -

Design and performance of InP/GaInAs/InP abrupt DHBTs

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Conference

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