Design and modeling of the electrostatically controlled nanowire FET for ppt-level hydrogen sensing

Keyphrases

• Dry Air 100%
• Hydrogen Sensing 100%
• NWFET 100%
• Drain Current 100%
• Field-effect Transistors 66%
• Palladium 66%
• Silicon-on-insulator 66%
• Metal Gate 33%
• Silica 33%
• Sensing Mechanism 33%
• Induced Dipoles 33%
• Limit of Detection 33%
• Detection Accuracy 33%
• Dynamic Range 33%
• Dual Role 33%
• Power Consumption 33%
• Operation Regimes 33%
• Range Limits 33%
• Time-resolved Detection 33%
• Complementary Metal Oxide Semiconductor 33%
• Sensor Response 33%
• Current Response 33%
• Potential Drop 33%
• Sensor-based 33%
• H2 Gas 33%
• Palladium Surface 33%
• Sensing Platform 33%
• Very Large Scale Integration 33%
• Steady-state Model 33%
• Dipole Layer 33%
• H Atoms 33%
• Subthreshold Operation 33%
• H2 Adsorption 33%
• H2 Gas Sensor 33%
• Semiconductor Fabrication Process 33%
• Back-gate Bias 33%
• Palladium Layer 33%

Engineering

• Nanowires 100%
• Hydrogen Level 100%
• Field-Effect Transistor 100%
• Current Drain 75%
• Dry Air 75%
• Silicon on Insulator 50%
• Induced Dipole 25%
• Numerical Study 25%
• Electric Power Utilization 25%
• Detection Limit 25%
• Adsorption 25%
• Sensor Response 25%
• Gas Sensor 25%
• Dynamic Range 25%
• Gate Bias 25%
• Metal Gate 25%
• Potential Drop 25%
• Complementary Metal-Oxide-Semiconductor 25%
• Sensing Mechanisms 25%
• VLSI Circuits 25%
• Steady-State Model 25%
• Semiconductor Fabrication 25%