TY - JOUR
T1 - Deposition of CoPtP films from citric electrolyte
AU - Berkh, O.
AU - Rosenberg, Yu
AU - Shacham-Diamand, Y.
AU - Gileadi, E.
PY - 2007/11
Y1 - 2007/11
N2 - Magnetically hard CoPtP (up to 40 μm thickness) films for MEMS application were deposited from citrate electrolyte and considered in terms of their composition, structure, magnetic characteristics and deposition conditions. Films containing 83-92 at.% (a/o) Co were deposited in the presence of NaH2PO2 in the electrolyte, with current efficiency of about 20% (deposition rate 10-12 μm/h). Coercivity 2.7-2.8 kOe and remanence 3.0 kG were achieved magnetizing in the direction normal to the film plane. According to XRD analysis, films seem to consist of hexagonal phase of CoPt solid solutions. Current efficiency, composition and morphology of the films, as well as their magnetic characteristics, were influenced by the electrolyte prehistory and total charge passed through the electrolyte in previous operation.
AB - Magnetically hard CoPtP (up to 40 μm thickness) films for MEMS application were deposited from citrate electrolyte and considered in terms of their composition, structure, magnetic characteristics and deposition conditions. Films containing 83-92 at.% (a/o) Co were deposited in the presence of NaH2PO2 in the electrolyte, with current efficiency of about 20% (deposition rate 10-12 μm/h). Coercivity 2.7-2.8 kOe and remanence 3.0 kG were achieved magnetizing in the direction normal to the film plane. According to XRD analysis, films seem to consist of hexagonal phase of CoPt solid solutions. Current efficiency, composition and morphology of the films, as well as their magnetic characteristics, were influenced by the electrolyte prehistory and total charge passed through the electrolyte in previous operation.
KW - CoPtP alloys
KW - Electrodeposition
KW - Perpendicular anisotropy
KW - Thick films
UR - http://www.scopus.com/inward/record.url?scp=34548843888&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2007.05.049
DO - 10.1016/j.mee.2007.05.049
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AN - SCOPUS:34548843888
SN - 0167-9317
VL - 84
SP - 2444
EP - 2449
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 11
ER -