Density functional theory study of deep traps in silicon nitride memories

Max Petersen; Yakov Roizin

doi:10.1063/1.2260829

Density functional theory study of deep traps in silicon nitride memories

Max Petersen^*, Yakov Roizin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Using density functional theory, the interaction of hydrogen with a nitrogen vacancy in β-Si₃N₄ is investigated. A single H atom was found to be energetically favorable over non- and doubly protonated vacancies. The traps composed of excess silicon and hydrogen have negative correlation energy which is connected with different distances of Si-H and Si-Si bonds in charged and neutral states. The energy gains after trapping are consistent with trap activation energies in advanced silicon nitride memories. Based on the present results, a model of memory traps is proposed.

Original language	English
Article number	053511
Journal	Applied Physics Letters
Volume	89
Issue number	5
DOIs	https://doi.org/10.1063/1.2260829
State	Published - 2006
Externally published	Yes

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10.1063/1.2260829

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abstract = "Using density functional theory, the interaction of hydrogen with a nitrogen vacancy in β-Si3N4 is investigated. A single H atom was found to be energetically favorable over non- and doubly protonated vacancies. The traps composed of excess silicon and hydrogen have negative correlation energy which is connected with different distances of Si-H and Si-Si bonds in charged and neutral states. The energy gains after trapping are consistent with trap activation energies in advanced silicon nitride memories. Based on the present results, a model of memory traps is proposed.",

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AB - Using density functional theory, the interaction of hydrogen with a nitrogen vacancy in β-Si3N4 is investigated. A single H atom was found to be energetically favorable over non- and doubly protonated vacancies. The traps composed of excess silicon and hydrogen have negative correlation energy which is connected with different distances of Si-H and Si-Si bonds in charged and neutral states. The energy gains after trapping are consistent with trap activation energies in advanced silicon nitride memories. Based on the present results, a model of memory traps is proposed.

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Density functional theory study of deep traps in silicon nitride memories

Abstract

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