Degradation study of single poly radiation sensors by monitoring charge trapping

Evgeny Pikhay*, Yakov Roizin, Yael Nemirovsky

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Special test structures emulating the performance of C-sensor, a direct floating gate (FG) ionizing radiation sensor, were used to investigate its degradation under Gamma radiation. Original MOS transistors with bulks made of crystalline silicon and Poly allowed minimizing the number of irradiations required to study the peculiarities of charge accumulation in the dielectrics of C-sensors. Electrical characterization of the developed structures before and after the exposure to different doses of Gamma radiation was performed. The guidelines for improving sensor immunity to radiation degradation are discussed.

Original languageEnglish
Pages (from-to)18-25
Number of pages8
JournalMicroelectronics Reliability
StatePublished - 1 Apr 2016
Externally publishedYes


  • Floating gate
  • Gamma-ray detection
  • Ionizing radiation sensors
  • Radiation detectors
  • Semiconductor radiation detectors
  • Silicon radiation detectors
  • X-ray detection


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