@article{5b9b4377a1704c73b5bd68f46ad42c09,
title = "Deep traps in oxide-nitride-oxide stacks fabricated from hydrogen and deuterium containing precursors",
abstract = "The energy spectrum of the traps and thermal stability of stored charge have been studied by the thermostimulated exoelectron emission method in hydrogenated H and deuterated D oxide-nitride-oxide (ONO) multilayer stacks of silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memories. It is shown that the trap energies are identical for both types of ONO. The deep traps responsible for charge storage have an activation energy 1.7-1.8 eV and are attributed to complexes containing excess silicon with chemically bonded hydrogen or deuterium atoms. It was found that the stability of the deep traps in D-ONO stacks is much higher than in standard H-ONO. It is supposed that the observed isotopic effect is related to different vibration dynamics of hydrogen bonds compared with deuterium bonds.",
author = "G. Rosenman and M. Naich and Ya Roizin and {Van Schaijk}, Rob",
note = "Funding Information: This work was supported in part by the “MAGNET” program of the Chief Scientist Office at the Israeli Ministry of Industry and Trade, Consortium of Emerging Dielectrics and Conductor Technologies for the Semiconductor Industry.",
year = "2006",
month = jan,
day = "15",
doi = "10.1063/1.2161416",
language = "אנגלית",
volume = "99",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "2",
}
