Dark properties and transient current response of Si0.95Ge 0.05 n+p devices

Arie Ruzin; S. Marunko; N. V. Abrosimov; H. Riemann

doi:10.1016/j.nima.2003.11.025

Dark properties and transient current response of Si_0.95Ge _0.05 n+p devices

Arie Ruzin^*, S. Marunko, N. V. Abrosimov, H. Riemann

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this study we present the dark properties of 'pin' devices fabricated with Czochralski grown Si_0.95Ge_0.05 bulk single crystals. The growth of such material is most challenging because of the constitutional supercooling effect. The potential advantages of Si_1-xGe_x to be used for X- and gamma-ray detection applications are overviewed. At room temperature the generation current in the devices is too high for spectroscopy applications, but enables transient current technique (TCT) measurements. The current however drops significantly with moderate cooling. The effective majority carrier concentration is shown to be ∼2×10 ¹⁴cm^-3, and hole mobility ∼320cm²/Vs.

Original language	English
Pages (from-to)	373-375
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	518
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nima.2003.11.025
State	Published - 1 Feb 2004
Event	Frontier Detectors for Frontier Physics, Proceedings - La Biodola, Italy Duration: 25 May 2003 → 31 May 2003

Keywords

Detectors
Pin devices
Si
SiGe
TCT

Access to Document

10.1016/j.nima.2003.11.025

Cite this

@article{2accf2346fa74013ae5e6cf170bfff49,

title = "Dark properties and transient current response of Si0.95Ge 0.05 n+p devices",

abstract = "In this study we present the dark properties of 'pin' devices fabricated with Czochralski grown Si0.95Ge0.05 bulk single crystals. The growth of such material is most challenging because of the constitutional supercooling effect. The potential advantages of Si1-xGex to be used for X- and gamma-ray detection applications are overviewed. At room temperature the generation current in the devices is too high for spectroscopy applications, but enables transient current technique (TCT) measurements. The current however drops significantly with moderate cooling. The effective majority carrier concentration is shown to be ∼2×10 14cm-3, and hole mobility ∼320cm2/Vs.",

keywords = "Detectors, Pin devices, Si, SiGe, TCT",

author = "Arie Ruzin and S. Marunko and Abrosimov, {N. V.} and H. Riemann",

year = "2004",

month = feb,

day = "1",

doi = "10.1016/j.nima.2003.11.025",

language = "אנגלית",

volume = "518",

pages = "373--375",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier",

number = "1-2",

note = "Frontier Detectors for Frontier Physics, Proceedings ; Conference date: 25-05-2003 Through 31-05-2003",

}

Dark properties and transient current response of Si_0.95Ge _0.05 n+p devices. / Ruzin, Arie; Marunko, S.; Abrosimov, N. V. et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 518, No. 1-2, 01.02.2004, p. 373-375.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Dark properties and transient current response of Si0.95Ge 0.05 n+p devices

AU - Ruzin, Arie

AU - Marunko, S.

AU - Abrosimov, N. V.

AU - Riemann, H.

PY - 2004/2/1

Y1 - 2004/2/1

N2 - In this study we present the dark properties of 'pin' devices fabricated with Czochralski grown Si0.95Ge0.05 bulk single crystals. The growth of such material is most challenging because of the constitutional supercooling effect. The potential advantages of Si1-xGex to be used for X- and gamma-ray detection applications are overviewed. At room temperature the generation current in the devices is too high for spectroscopy applications, but enables transient current technique (TCT) measurements. The current however drops significantly with moderate cooling. The effective majority carrier concentration is shown to be ∼2×10 14cm-3, and hole mobility ∼320cm2/Vs.

AB - In this study we present the dark properties of 'pin' devices fabricated with Czochralski grown Si0.95Ge0.05 bulk single crystals. The growth of such material is most challenging because of the constitutional supercooling effect. The potential advantages of Si1-xGex to be used for X- and gamma-ray detection applications are overviewed. At room temperature the generation current in the devices is too high for spectroscopy applications, but enables transient current technique (TCT) measurements. The current however drops significantly with moderate cooling. The effective majority carrier concentration is shown to be ∼2×10 14cm-3, and hole mobility ∼320cm2/Vs.

KW - Detectors

KW - Pin devices

KW - Si

KW - SiGe

KW - TCT

UR - http://www.scopus.com/inward/record.url?scp=0942299034&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2003.11.025

DO - 10.1016/j.nima.2003.11.025

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0942299034

SN - 0168-9002

VL - 518

SP - 373

EP - 375

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1-2

T2 - Frontier Detectors for Frontier Physics, Proceedings

Y2 - 25 May 2003 through 31 May 2003

ER -

Dark properties and transient current response of Si_0.95Ge _0.05 n+p devices

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this