Dark properties and transient current response of Si0.95Ge 0.05 n+p devices

Arie Ruzin*, S. Marunko, N. V. Abrosimov, H. Riemann

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


In this study we present the dark properties of 'pin' devices fabricated with Czochralski grown Si0.95Ge0.05 bulk single crystals. The growth of such material is most challenging because of the constitutional supercooling effect. The potential advantages of Si1-xGex to be used for X- and gamma-ray detection applications are overviewed. At room temperature the generation current in the devices is too high for spectroscopy applications, but enables transient current technique (TCT) measurements. The current however drops significantly with moderate cooling. The effective majority carrier concentration is shown to be ∼2×10 14cm-3, and hole mobility ∼320cm2/Vs.

Original languageEnglish
Pages (from-to)373-375
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1-2
StatePublished - 1 Feb 2004
EventFrontier Detectors for Frontier Physics, Proceedings - La Biodola, Italy
Duration: 25 May 200331 May 2003


  • Detectors
  • Pin devices
  • Si
  • SiGe
  • TCT


Dive into the research topics of 'Dark properties and transient current response of Si0.95Ge 0.05 n+p devices'. Together they form a unique fingerprint.

Cite this