TY - JOUR
T1 - Crystallographic transitions related to magnetic and electronic phenomena in TM compounds under high pressure
AU - Rozenberg, G. Kh
AU - Pasternak, M. P.
N1 - Funding Information:
We would like to thank Drs L. Dubrovinsky, W.M. Xu, A.P. Milner, G.R. Hearne, R. Jeanloz, R.D. Taylor, and A. Kurnosov for fruitful discussions and contributions to the XRD, and MS experiments. We thank O. Naaman, G. Yu. Machavariani, H. Amiel, M. Kertser for assisting with the synchrotron experiments and for performing the resistivity measurements. We thank Drs M. Hanfland, T. Le Bihan, S. Carlson, and M. Amboage for experimental assistance with the facilities of the ID09 and ID30 HP beams at ESRF. This work was supported in part by Israeli Science Foundation Grants No. 40/02 and No. 36/05.
PY - 2007/10
Y1 - 2007/10
N2 - Structural aspects of magnetic/electronic transitions in strongly correlated systems in a regime of very high static density are the main issues of this article. To achieve this objective, we have carried out series of X-ray diffraction (XRD) measurements up to 120 GPa using diamond anvil cells (DACs) to probe structural features specifically related to pressure-induced (PI) magnetic/electronic phenomena in transition metal (TM) compounds. The types of phenomena are the Mott transition (MT), high-spin (HS) to low-spin (LS) transition, valence transformations, the quenching of the orbital term, and Verwey transition. In all these cases, the electronic transition may induce or be a consequence of structural alterations. These studies provide essential information concerning: (i) structural alterations attributed to the valence transformation in some TM compounds; (ii) mechanisms and precursors responsible for the PI MT; features of the structural transformation specifically attributed to the MT for different types of the electronic transitions (Mott-Hubbard and Charge-Transfer); (iii) the mechanism of the PI degradation of the magnetic state due to HS-LS transition and their influence on the structural properties of material; (iv) mechanism of Verwey transition in magnetite; (v) structure of new phases at high pressure. As example cases we present recent results in some Fe-oxides, halides, and sulfides.
AB - Structural aspects of magnetic/electronic transitions in strongly correlated systems in a regime of very high static density are the main issues of this article. To achieve this objective, we have carried out series of X-ray diffraction (XRD) measurements up to 120 GPa using diamond anvil cells (DACs) to probe structural features specifically related to pressure-induced (PI) magnetic/electronic phenomena in transition metal (TM) compounds. The types of phenomena are the Mott transition (MT), high-spin (HS) to low-spin (LS) transition, valence transformations, the quenching of the orbital term, and Verwey transition. In all these cases, the electronic transition may induce or be a consequence of structural alterations. These studies provide essential information concerning: (i) structural alterations attributed to the valence transformation in some TM compounds; (ii) mechanisms and precursors responsible for the PI MT; features of the structural transformation specifically attributed to the MT for different types of the electronic transitions (Mott-Hubbard and Charge-Transfer); (iii) the mechanism of the PI degradation of the magnetic state due to HS-LS transition and their influence on the structural properties of material; (iv) mechanism of Verwey transition in magnetite; (v) structure of new phases at high pressure. As example cases we present recent results in some Fe-oxides, halides, and sulfides.
KW - Electronic/magnetic transitions
KW - High pressure
KW - Strongly correlated systems
KW - X-ray crystallography
UR - http://www.scopus.com/inward/record.url?scp=35348856542&partnerID=8YFLogxK
U2 - 10.1080/01411590701473184
DO - 10.1080/01411590701473184
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AN - SCOPUS:35348856542
SN - 0141-1594
VL - 80
SP - 1131
EP - 1150
JO - Phase Transitions
JF - Phase Transitions
IS - 10-12
ER -