Critical dimension improvement of plasma enhanced chemical vapor deposition silicon nitride thin films in GaAs devices

Keyphrases

• Process Conditions 100%
• Etching Process 100%
• Plasma-enhanced Chemical Vapor Deposition (PECVD) 100%
• Deposition Process 100%
• GaAs Devices 100%
• Silicon Nitride Film 100%
• Silicon Nitride 50%
• Chemical Composition 50%
• Deposition Rate 50%
• Physical Properties 50%
• Refractive Index 50%
• Etching Rate 50%
• Dielectric Layer 50%
• RF Power 50%
• Submicron Resolution 50%
• Empirical Formula 50%
• Interlayer Properties 50%
• Dry Etching 50%
• Device Fabrication 50%
• Wet Etching 50%
• Layer Characteristics 50%
• Critical Dimension Control 50%
• Gas Flow Ratio 50%
• Photoresist Mask 50%

Engineering

• Chemical Vapor Deposition 100%
• Thin Films 100%
• Vapor Deposition 100%
• Nitride 100%
• Critical Dimension 100%
• Gaas Device 100%
• Process Condition 66%
• Etching Process 66%
• Deposition Process 66%
• Refractive Index 33%
• Process Parameter 33%
• Deposition Rate 33%
• Photoresist 33%
• Dielectric Layer 33%
• Gas Flow 33%
• Pressure Ratio 33%
• Dry Etching 33%

Material Science

• Silicon Nitride 100%
• Thin Films 100%
• Plasma-Enhanced Chemical Vapor Deposition 100%
• Gallium Arsenide 100%
• Dielectric Material 33%
• Refractive Index 33%
• Physical Property 33%
• Wet Etching 33%
• Gas Flow 33%
• Dry Etching 33%
• Device Fabrication 33%