TY - JOUR
T1 - Creep-controlled electromigration in near-threshold interconnects
AU - Glickman, E.
AU - Nathan, M.
N1 - Funding Information:
We acknowledge fruitful discussions with Professor M. Molotskii. This research was partially supported by the Israel Ministry of Science under the grant # 96722-97.
PY - 2000/1
Y1 - 2000/1
N2 - A model of creep affected electromigration (CAEM) in near-threshold conductors is shown to fit electromigration threshold and kinetics data better than the Blech model. Its most significant prediction is that the overall rate of EM displacement in near-threshold conductors is controlled by a strictly local mechanical process, diffusional creep, most likely by a bulk diffusion Nabarro-Herring process.
AB - A model of creep affected electromigration (CAEM) in near-threshold conductors is shown to fit electromigration threshold and kinetics data better than the Blech model. Its most significant prediction is that the overall rate of EM displacement in near-threshold conductors is controlled by a strictly local mechanical process, diffusional creep, most likely by a bulk diffusion Nabarro-Herring process.
UR - http://www.scopus.com/inward/record.url?scp=0033640230&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(99)00299-3
DO - 10.1016/S0167-9317(99)00299-3
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AN - SCOPUS:0033640230
SN - 0167-9317
VL - 50
SP - 329
EP - 334
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1-4
T2 - Proceedings of the 1999 3rd Eropean Workshop on Materials for Advanced Metallization (MAM'99)
Y2 - 7 March 1999 through 10 March 1999
ER -