Creep-controlled electromigration in near-threshold interconnects

E. Glickman*, M. Nathan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


A model of creep affected electromigration (CAEM) in near-threshold conductors is shown to fit electromigration threshold and kinetics data better than the Blech model. Its most significant prediction is that the overall rate of EM displacement in near-threshold conductors is controlled by a strictly local mechanical process, diffusional creep, most likely by a bulk diffusion Nabarro-Herring process.

Original languageEnglish
Pages (from-to)329-334
Number of pages6
JournalMicroelectronic Engineering
Issue number1-4
StatePublished - Jan 2000
EventProceedings of the 1999 3rd Eropean Workshop on Materials for Advanced Metallization (MAM'99) - Ostende, Belg
Duration: 7 Mar 199910 Mar 1999


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