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CoWBP capping barrier layer for sub 90 nm Cu interconnects
R. Ofek Almog
*
, Y. Sverdlov
,
I. Goldfarb
,
Y. Shacham-Diamand
*
Corresponding author for this work
Department of Electrical Engineering - Physical Eng.
SOLID MECHANICS & MATERIAL & STRUCTURES
Tel Aviv University
Research output
:
Contribution to journal
›
Article
›
peer-review
16
Scopus citations
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Keyphrases
Chemical Composition
100%
Solution Composition
100%
Crystalline Structure
100%
Electrical Conductivity
100%
Electroless Plating
100%
Film Composition
100%
Reducing Agent
100%
Dimethylamine Borane
100%
Sodium Hypophosphite
100%
Electroplating Bath
100%
Barrier Properties
100%
Via Contacts
100%
Capping Layer
100%
Oxidation State
100%
Autocatalytic
100%
Contact Line
100%
Chemical Oxidation
100%
Barrier Layer
100%
Copper Line
100%
Cobalt Film
100%
Copper Metallization
100%
Electroless Cobalt
100%
Oxidation Resistance
100%
Encapsulation Layer
100%
Diffusion Barrier Layer
100%
Spontaneous Activation
100%
Resistance Studies
100%
Cu Interconnect
100%
Engineering
Interconnects
100%
Barrier Layer
100%
Metallizations
50%
Sodium Hypophosphite
50%
Barrier Property
50%
Capping Layer
50%
Chemical Oxidation
50%
Oxidation Resistance
50%
Diffusion Barrier
50%
Crystal Structure
50%
Electroless Plating
50%
Material Science
Film
100%
Electrical Resistivity
16%
Electroless Deposition
16%
Sodium
16%
Reducing Agent
16%
Cobalt
16%
Plating
16%
Oxidation Resistance
16%
Crystal Structure
16%