CoWBP capping barrier layer for sub 90 nm Cu interconnects

Electroless cobalt films have been obtained by deposition using a plating bath containing two reducing agents: dimethylamineborane (DMAB) and sodium hypophosphite. This formulation allows spontaneous activation on copper followed by auto catalytic electroless plating. CoWBP and CoBP films are proposed as diffusion barriers and encapsulation layers, for copper lines and via contacts for ULSI interconnect applications. The crystalline structure, chemical composition and oxidation states of the elements were studied, as well as the electrical resistivity, topography and morphology of the films. The film composition was characterized as a function of the solution composition; the barrier properties of the films were tested and an oxidation resistance study was conducted. The films were characterized and the results show that they can be applied as capping layers for ULSI copper metallization.