Abstract
CoSi2 surface phase separation into self-assembled lateral multilayers was studied. CoSi2 was grown on the Si(001) surface by solid-phase reaction. The solid-phase reaction was complete after a 700°C anneal followed from the reflection high-energy electron diffraction analysis. Scanning tunneling microscopy observations of the resulting surface revealed many atomic reconstructions, some apparent only under bias-dependent imaging conditions. Alternating (3 √2×2 √2)-R45° and (4√2 × 2√2)-R45° surface domains arranged in long parallel stripes was shown.
Original language | English |
---|---|
Pages (from-to) | 1185-1187 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 8 |
DOIs | |
State | Published - 24 Feb 2003 |