CoSi2 surface phase separation into self-assembled lateral multilayers

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Abstract

CoSi2 surface phase separation into self-assembled lateral multilayers was studied. CoSi2 was grown on the Si(001) surface by solid-phase reaction. The solid-phase reaction was complete after a 700°C anneal followed from the reflection high-energy electron diffraction analysis. Scanning tunneling microscopy observations of the resulting surface revealed many atomic reconstructions, some apparent only under bias-dependent imaging conditions. Alternating (3 √2×2 √2)-R45° and (4√2 × 2√2)-R45° surface domains arranged in long parallel stripes was shown.

Original languageEnglish
Pages (from-to)1185-1187
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number8
DOIs
StatePublished - 24 Feb 2003

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