GaAs - GaAlAs double-heterostructure injection lasers consist of several epilayers of GaAs and GaAlAs grown on a GaAs substrate. The need for cleaved end mirrors may be eliminated in these lasers by incorporating internal periodic corrugation which provide feedback. Such corrugated laser structures are compatible with the fabrication of monolithic optical circuits and seem to be most suitable as light sources for integrated optics. Corrugated structures have been prepared by ion milling or chemical etching through a photoresist mask which was generated by the interference of two laser beams. Laser emission was observed from GaAS - GaAlAs double heterostructures with internal corrugation when pumped electrically at 77 degree K. Theoretical considerations indicate that such lasers should have a very low threshold current and a good wavelength selectivity. Further experimental work on these devices is now in progress.
|Number of pages||4|
|State||Published - 1975|
|Event||for 2nd Conf on Struct/Prop Relat in Thick Films and Bulk Coat - San Francisco, CA, USA|
Duration: 10 Feb 1975 → 12 Feb 1975
|Conference||for 2nd Conf on Struct/Prop Relat in Thick Films and Bulk Coat|
|City||San Francisco, CA, USA|
|Period||10/02/75 → 12/02/75|