Correlation between electrical and compositional properties of SiO 2-InSb interfaces

Y. Avigal; J. Bregman; Yoram Shapira

doi:10.1063/1.340258

Correlation between electrical and compositional properties of SiO ₂-InSb interfaces

Y. Avigal^*, J. Bregman, Yoram Shapira

^*Corresponding author for this work

Department of Electrical Engineering - Physical Eng.

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We have studied interfaces of n-InSb with SiO₂ films, obtained by low-temperature chemical vapor deposition, using capacitance-voltage measurements and Auger electron spectroscopy (AES). Improvements of electrical properties of MOS capacitors based on this system were sought by various pre- and post-treatments. The results show that a methanol pre-treatment causes significant improvements in the flat-band voltage (V_FB) of metal-oxide-semiconductor capacitors based on this system. In addition, thermal post-annealing in oxidizing atmospheres also improved V_FB. AES reveals that at the SiO₂-InSb interface there is a native oxide interlayer, the width of which was found to be reduced by a factor of 2-3 due to the specified treatments. Therefore, we attribute the V_FB improvement to the reduction in the density of charges and traps due to the narrowing of the interfacial native oxide, in agreement with other recent results.

Original language	English
Pages (from-to)	430-434
Number of pages	5
Journal	Journal of Applied Physics
Volume	63
Issue number	2
DOIs	https://doi.org/10.1063/1.340258
State	Published - 1988

Access to Document

10.1063/1.340258

Cite this

@article{c46659ddab854aa2ae08a3a5f48cc783,

title = "Correlation between electrical and compositional properties of SiO 2-InSb interfaces",

abstract = "We have studied interfaces of n-InSb with SiO2 films, obtained by low-temperature chemical vapor deposition, using capacitance-voltage measurements and Auger electron spectroscopy (AES). Improvements of electrical properties of MOS capacitors based on this system were sought by various pre- and post-treatments. The results show that a methanol pre-treatment causes significant improvements in the flat-band voltage (VFB) of metal-oxide-semiconductor capacitors based on this system. In addition, thermal post-annealing in oxidizing atmospheres also improved VFB. AES reveals that at the SiO2-InSb interface there is a native oxide interlayer, the width of which was found to be reduced by a factor of 2-3 due to the specified treatments. Therefore, we attribute the VFB improvement to the reduction in the density of charges and traps due to the narrowing of the interfacial native oxide, in agreement with other recent results.",

author = "Y. Avigal and J. Bregman and Yoram Shapira",

year = "1988",

doi = "10.1063/1.340258",

language = "אנגלית",

volume = "63",

pages = "430--434",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Correlation between electrical and compositional properties of SiO 2-InSb interfaces

AU - Avigal, Y.

AU - Bregman, J.

AU - Shapira, Yoram

PY - 1988

Y1 - 1988

N2 - We have studied interfaces of n-InSb with SiO2 films, obtained by low-temperature chemical vapor deposition, using capacitance-voltage measurements and Auger electron spectroscopy (AES). Improvements of electrical properties of MOS capacitors based on this system were sought by various pre- and post-treatments. The results show that a methanol pre-treatment causes significant improvements in the flat-band voltage (VFB) of metal-oxide-semiconductor capacitors based on this system. In addition, thermal post-annealing in oxidizing atmospheres also improved VFB. AES reveals that at the SiO2-InSb interface there is a native oxide interlayer, the width of which was found to be reduced by a factor of 2-3 due to the specified treatments. Therefore, we attribute the VFB improvement to the reduction in the density of charges and traps due to the narrowing of the interfacial native oxide, in agreement with other recent results.

AB - We have studied interfaces of n-InSb with SiO2 films, obtained by low-temperature chemical vapor deposition, using capacitance-voltage measurements and Auger electron spectroscopy (AES). Improvements of electrical properties of MOS capacitors based on this system were sought by various pre- and post-treatments. The results show that a methanol pre-treatment causes significant improvements in the flat-band voltage (VFB) of metal-oxide-semiconductor capacitors based on this system. In addition, thermal post-annealing in oxidizing atmospheres also improved VFB. AES reveals that at the SiO2-InSb interface there is a native oxide interlayer, the width of which was found to be reduced by a factor of 2-3 due to the specified treatments. Therefore, we attribute the VFB improvement to the reduction in the density of charges and traps due to the narrowing of the interfacial native oxide, in agreement with other recent results.

UR - http://www.scopus.com/inward/record.url?scp=3743137968&partnerID=8YFLogxK

U2 - 10.1063/1.340258

DO - 10.1063/1.340258

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:3743137968

SN - 0021-8979

VL - 63

SP - 430

EP - 434

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Correlation between electrical and compositional properties of SiO ₂-InSb interfaces

Abstract

Access to Document

Other files and links

Fingerprint

Cite this