Correlation between electrical and compositional properties of SiO 2-InSb interfaces

Y. Avigal; J. Bregman; Yoram Shapira

doi:10.1063/1.340258

Correlation between electrical and compositional properties of SiO ₂-InSb interfaces

Y. Avigal^*, J. Bregman, Yoram Shapira

^*Corresponding author for this work

Department of Electrical Engineering - Physical Eng.

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied interfaces of n-InSb with SiO₂ films, obtained by low-temperature chemical vapor deposition, using capacitance-voltage measurements and Auger electron spectroscopy (AES). Improvements of electrical properties of MOS capacitors based on this system were sought by various pre- and post-treatments. The results show that a methanol pre-treatment causes significant improvements in the flat-band voltage (V_FB) of metal-oxide-semiconductor capacitors based on this system. In addition, thermal post-annealing in oxidizing atmospheres also improved V_FB. AES reveals that at the SiO₂-InSb interface there is a native oxide interlayer, the width of which was found to be reduced by a factor of 2-3 due to the specified treatments. Therefore, we attribute the V_FB improvement to the reduction in the density of charges and traps due to the narrowing of the interfacial native oxide, in agreement with other recent results.

Original language	English
Pages (from-to)	430-434
Number of pages	5
Journal	Journal of Applied Physics
Volume	63
Issue number	2
DOIs	https://doi.org/10.1063/1.340258
State	Published - 1988

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abstract = "We have studied interfaces of n-InSb with SiO2 films, obtained by low-temperature chemical vapor deposition, using capacitance-voltage measurements and Auger electron spectroscopy (AES). Improvements of electrical properties of MOS capacitors based on this system were sought by various pre- and post-treatments. The results show that a methanol pre-treatment causes significant improvements in the flat-band voltage (VFB) of metal-oxide-semiconductor capacitors based on this system. In addition, thermal post-annealing in oxidizing atmospheres also improved VFB. AES reveals that at the SiO2-InSb interface there is a native oxide interlayer, the width of which was found to be reduced by a factor of 2-3 due to the specified treatments. Therefore, we attribute the VFB improvement to the reduction in the density of charges and traps due to the narrowing of the interfacial native oxide, in agreement with other recent results.",

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N2 - We have studied interfaces of n-InSb with SiO2 films, obtained by low-temperature chemical vapor deposition, using capacitance-voltage measurements and Auger electron spectroscopy (AES). Improvements of electrical properties of MOS capacitors based on this system were sought by various pre- and post-treatments. The results show that a methanol pre-treatment causes significant improvements in the flat-band voltage (VFB) of metal-oxide-semiconductor capacitors based on this system. In addition, thermal post-annealing in oxidizing atmospheres also improved VFB. AES reveals that at the SiO2-InSb interface there is a native oxide interlayer, the width of which was found to be reduced by a factor of 2-3 due to the specified treatments. Therefore, we attribute the VFB improvement to the reduction in the density of charges and traps due to the narrowing of the interfacial native oxide, in agreement with other recent results.

AB - We have studied interfaces of n-InSb with SiO2 films, obtained by low-temperature chemical vapor deposition, using capacitance-voltage measurements and Auger electron spectroscopy (AES). Improvements of electrical properties of MOS capacitors based on this system were sought by various pre- and post-treatments. The results show that a methanol pre-treatment causes significant improvements in the flat-band voltage (VFB) of metal-oxide-semiconductor capacitors based on this system. In addition, thermal post-annealing in oxidizing atmospheres also improved VFB. AES reveals that at the SiO2-InSb interface there is a native oxide interlayer, the width of which was found to be reduced by a factor of 2-3 due to the specified treatments. Therefore, we attribute the VFB improvement to the reduction in the density of charges and traps due to the narrowing of the interfacial native oxide, in agreement with other recent results.

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Correlation between electrical and compositional properties of SiO ₂-InSb interfaces

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