Correlating gate sinking and electrical performance of pseudomorphic high electron mobility transistors

Ronen A. Berechman; Boris Revzin; Yoram Shapira

doi:10.1016/j.microrel.2006.08.020

Correlating gate sinking and electrical performance of pseudomorphic high electron mobility transistors

Ronen A. Berechman, Boris Revzin, Yoram Shapira^*

^*Corresponding author for this work

Department of Electrical Engineering - Physical Eng.

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Ti interdiffusion from the Ti/Pt/Au gate into the AlGaAs Schottky barrier layer (SBL) of 0.25-μm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) has been studied using the accelerated life testing technique. Based on measurements and modeling, analytical expressions for quantitative correlation between the positive pinch-off voltage (V_P) shift as well as the saturation drain current (I_Dsat) decrease and the physical damage occurring during gate sinking has been developed. It is suggested that the main cause for device failure is the growth of the TiAs phase leading to the decrease in the SBL thickness. Additionally, it is suggested that V_P may be used as a better indicator for device degradation than I_Dsat since it is linearly proportional to the degrading physical characteristic - the Schottky barrier layer thickness.

Original language	English
Pages (from-to)	1202-1207
Number of pages	6
Journal	Microelectronics Reliability
Volume	47
Issue number	8
DOIs	https://doi.org/10.1016/j.microrel.2006.08.020
State	Published - Aug 2007

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title = "Correlating gate sinking and electrical performance of pseudomorphic high electron mobility transistors",

abstract = "Ti interdiffusion from the Ti/Pt/Au gate into the AlGaAs Schottky barrier layer (SBL) of 0.25-μm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) has been studied using the accelerated life testing technique. Based on measurements and modeling, analytical expressions for quantitative correlation between the positive pinch-off voltage (VP) shift as well as the saturation drain current (IDsat) decrease and the physical damage occurring during gate sinking has been developed. It is suggested that the main cause for device failure is the growth of the TiAs phase leading to the decrease in the SBL thickness. Additionally, it is suggested that VP may be used as a better indicator for device degradation than IDsat since it is linearly proportional to the degrading physical characteristic - the Schottky barrier layer thickness.",

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AU - Berechman, Ronen A.

AU - Revzin, Boris

AU - Shapira, Yoram

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N2 - Ti interdiffusion from the Ti/Pt/Au gate into the AlGaAs Schottky barrier layer (SBL) of 0.25-μm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) has been studied using the accelerated life testing technique. Based on measurements and modeling, analytical expressions for quantitative correlation between the positive pinch-off voltage (VP) shift as well as the saturation drain current (IDsat) decrease and the physical damage occurring during gate sinking has been developed. It is suggested that the main cause for device failure is the growth of the TiAs phase leading to the decrease in the SBL thickness. Additionally, it is suggested that VP may be used as a better indicator for device degradation than IDsat since it is linearly proportional to the degrading physical characteristic - the Schottky barrier layer thickness.

AB - Ti interdiffusion from the Ti/Pt/Au gate into the AlGaAs Schottky barrier layer (SBL) of 0.25-μm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) has been studied using the accelerated life testing technique. Based on measurements and modeling, analytical expressions for quantitative correlation between the positive pinch-off voltage (VP) shift as well as the saturation drain current (IDsat) decrease and the physical damage occurring during gate sinking has been developed. It is suggested that the main cause for device failure is the growth of the TiAs phase leading to the decrease in the SBL thickness. Additionally, it is suggested that VP may be used as a better indicator for device degradation than IDsat since it is linearly proportional to the degrading physical characteristic - the Schottky barrier layer thickness.

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Correlating gate sinking and electrical performance of pseudomorphic high electron mobility transistors

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