Keyphrases
Thermal Stability
100%
Technology Integration
100%
Metallization
100%
Copper-based
100%
Copper Deposition
100%
Ultra-large-scale
100%
Stability Issues
100%
Diffusion Barrier
50%
Cu-based
50%
Non-planar
25%
Low Temperature
25%
Adhesion
25%
Upper Level
25%
Transmission Electron Microscopy
25%
Electroless Plating
25%
Low Resistivity
25%
Auger Electron Spectroscopy
25%
Etching Process
25%
Passivation Layer
25%
Deposition Process
25%
Microscopy Electron
25%
Alloying Elements
25%
Layered Structure
25%
Wiring
25%
Silicide
25%
Self-formation
25%
Adhesion Layer
25%
Electromigration
25%
Extremely Low Temperature
25%
Encapsulation Layer
25%
Fine Line
25%
Plating Technique
25%
Rutherford Backscattering
25%
Adhesion Promoter
25%
Integrated Device
25%
Stress-induced Migration
25%
Dielectric Substrate
25%
Self-encapsulation
25%
Cu-Si
25%
Interfacial Reaction
25%
Cu Metal
25%
Dry Etching
25%
Cu-SiO2
25%
Electromigration Resistance
25%
Self-adhesion
25%
Global Connectivity
25%
Cu Silicide
25%
Engineering
Metallizations
100%
Low-Temperature
50%
Diffusion Barrier
50%
Electromigration
50%
Dielectrics
25%
Transmissions
25%
Practical Aspect
25%
Electroless Plating
25%
Etching Process
25%
Deposition Process
25%
Alloying Element
25%
Passivation Layer
25%
Adhesion Layer
25%
Layered Structure
25%
Dry Etching
25%
Material Science
Thermal Stability
100%
Silicide
66%
Dielectric Material
33%
Oxidation Reaction
33%
Electrical Resistivity
33%
Electroless Deposition
33%
Auger Electron Spectroscopy
33%
Transmission Electron Microscopy
33%
Alloying
33%
Linewidth
33%
Dry Etching
33%
Chemical Engineering
Metallizing
100%
Diffusion Barrier
50%
Silicide
50%
Electroless Plating
25%
Alloying Element
25%