Controlling nanoslot overlimiting current with the depth of a connecting microchamber

G. Yossifon*, P. Mushenheim, H. C. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The overlimiting ion flux, in excess of the limiting-value stipulated by diffusion, across a wide nanoslot (of fixed depth) is shown to be sensitively dependent on the depth of the connecting microchamber at one end of the nanoslot, which controls the onset of a vortex instability that specifies the dimension of the concentration polarization layer responsible for overlimiting behavior. Simple scaling arguments relating the microchamber depth to the effective fluid viscosity produce experimentally verified scaling dependence of the polarization layer length, the onset voltage for overlimiting behavior and the overlimiting current on the microchamber depth.

Original languageEnglish
Article number64004
JournalJournal de Physique (Paris), Lettres
Volume90
Issue number6
DOIs
StatePublished - Jun 2010
Externally publishedYes

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