@article{4fc00a8982e04a01a1be625bfc049cbe,
title = "Controlled growth of aluminum oxide thin films on hydrogen terminated Si(0 0 1) surface",
abstract = "Auger electron spectroscopy, energy electron loss spectroscopy, atomic force microscopy and transmission electron microscopy were used to characterize ultra-thin aluminum oxide films grown on hydrogen-terminated Si(0 0 1)-H substrates via a specific atomic layer deposition and oxidation technique. Oxide thin films grown in such a way are highly stable with temperature at least up to 700 °C. Band gap was estimated to be 6.6±0.2 eV, independent of thickness. Formation of the oxide layer slightly increases the initial roughness of silicon surface. Furthermore, no silicon oxide was found at the aluminum oxide-silicon interface.",
keywords = "A1. AES, A1. AFM, A1. EELS, A1. HR-TEM, A1. Interfaces, A1. TEM, A2. Atomic layer deposition oxidation, A3. Molecular beam epitaxy, B1. Aluminum, B1. Oxides, B1. Silicon, B3. Heterojunctions semiconductor devices",
author = "S. Vizzini and H. Oughaddou and C. L{\'e}andri and Lazarov, \{V. K.\} and A. Kohn and K. Nguyen and C. Coudreau and Bib{\'e}rian, \{J. P.\} and B. Ealet and Lazzari, \{J. L.\} and \{Arnaud d'Avitaya\}, F. and B. Aufray",
note = "Funding Information: This work was supported by the European STREP-EMAC, contract number 017412.",
year = "2007",
month = jul,
day = "1",
doi = "10.1016/j.jcrysgro.2007.03.037",
language = "אנגלית",
volume = "305",
pages = "26--29",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier B.V.",
number = "1",
}