Controlled growth of aluminum oxide thin films on hydrogen terminated Si(0 0 1) surface

S. Vizzini*, H. Oughaddou, C. Léandri, V. K. Lazarov, A. Kohn, K. Nguyen, C. Coudreau, J. P. Bibérian, B. Ealet, J. L. Lazzari, F. Arnaud d'Avitaya, B. Aufray

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


Auger electron spectroscopy, energy electron loss spectroscopy, atomic force microscopy and transmission electron microscopy were used to characterize ultra-thin aluminum oxide films grown on hydrogen-terminated Si(0 0 1)-H substrates via a specific atomic layer deposition and oxidation technique. Oxide thin films grown in such a way are highly stable with temperature at least up to 700 °C. Band gap was estimated to be 6.6±0.2 eV, independent of thickness. Formation of the oxide layer slightly increases the initial roughness of silicon surface. Furthermore, no silicon oxide was found at the aluminum oxide-silicon interface.

Original languageEnglish
Pages (from-to)26-29
Number of pages4
JournalJournal of Crystal Growth
Issue number1
StatePublished - 1 Jul 2007
Externally publishedYes


FundersFunder number
European STREP-EMAC017412


    • A1. AES
    • A1. AFM
    • A1. EELS
    • A1. HR-TEM
    • A1. Interfaces
    • A1. TEM
    • A2. Atomic layer deposition oxidation
    • A3. Molecular beam epitaxy
    • B1. Aluminum
    • B1. Oxides
    • B1. Silicon
    • B3. Heterojunctions semiconductor devices


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