CONTINUOUS METAL-NONMETAL TRANSITION IN DISORDERED MATERIALS.

Morrell H. Cohen*, J. Jortner

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

The existence is proposed of an inhomogeneous transport regime in disordered materials in which gradual metal-semiconductor transition occurs. The material may be viewed as consisting of a random microscopic mixture of metallic and semiconducting regions, the density of states is reduced by the allowed (metallic) volume fraction, C(E//F), at the Fermi energy. The inhomogeneous regime is subdivided into pseudometallic and pseudosemiconductor parts separated by a percolation threshold. An effective-medium theory for the conductivity and for the Hall effect was applied to handle several classes of materials undergoing metal-nonmetal transition via the inhomogeneous transport regime.

Original languageEnglish
Pages167-176
Number of pages10
StatePublished - 1973
EventInt Conf on Amorphous and Liq Semicond, 5th, Proc - Garmsich-Partenkirchen, W Ger
Duration: 3 Sep 19738 Sep 1973

Conference

ConferenceInt Conf on Amorphous and Liq Semicond, 5th, Proc
CityGarmsich-Partenkirchen, W Ger
Period3/09/738/09/73

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