CONTINUOUS METAL-NONMETAL TRANSITION IN DISORDERED MATERIALS.

Morrell H. Cohen; J. Jortner

CONTINUOUS METAL-NONMETAL TRANSITION IN DISORDERED MATERIALS.

Morrell H. Cohen^*, J. Jortner

^*Corresponding author for this work

School of Chemistry

Research output: Contribution to conference › Paper › peer-review

Abstract

The existence is proposed of an inhomogeneous transport regime in disordered materials in which gradual metal-semiconductor transition occurs. The material may be viewed as consisting of a random microscopic mixture of metallic and semiconducting regions, the density of states is reduced by the allowed (metallic) volume fraction, C(E//F), at the Fermi energy. The inhomogeneous regime is subdivided into pseudometallic and pseudosemiconductor parts separated by a percolation threshold. An effective-medium theory for the conductivity and for the Hall effect was applied to handle several classes of materials undergoing metal-nonmetal transition via the inhomogeneous transport regime.

Original language	English
Pages	167-176
Number of pages	10
State	Published - 1973
Event	Int Conf on Amorphous and Liq Semicond, 5th, Proc - Garmsich-Partenkirchen, W Ger Duration: 3 Sep 1973 → 8 Sep 1973

Conference

Conference	Int Conf on Amorphous and Liq Semicond, 5th, Proc
City	Garmsich-Partenkirchen, W Ger
Period	3/09/73 → 8/09/73

Cite this

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title = "CONTINUOUS METAL-NONMETAL TRANSITION IN DISORDERED MATERIALS.",

abstract = "The existence is proposed of an inhomogeneous transport regime in disordered materials in which gradual metal-semiconductor transition occurs. The material may be viewed as consisting of a random microscopic mixture of metallic and semiconducting regions, the density of states is reduced by the allowed (metallic) volume fraction, C(E//F), at the Fermi energy. The inhomogeneous regime is subdivided into pseudometallic and pseudosemiconductor parts separated by a percolation threshold. An effective-medium theory for the conductivity and for the Hall effect was applied to handle several classes of materials undergoing metal-nonmetal transition via the inhomogeneous transport regime.",

author = "Cohen, {Morrell H.} and J. Jortner",

year = "1973",

language = "אנגלית",

pages = "167--176",

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T1 - CONTINUOUS METAL-NONMETAL TRANSITION IN DISORDERED MATERIALS.

AU - Cohen, Morrell H.

AU - Jortner, J.

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N2 - The existence is proposed of an inhomogeneous transport regime in disordered materials in which gradual metal-semiconductor transition occurs. The material may be viewed as consisting of a random microscopic mixture of metallic and semiconducting regions, the density of states is reduced by the allowed (metallic) volume fraction, C(E//F), at the Fermi energy. The inhomogeneous regime is subdivided into pseudometallic and pseudosemiconductor parts separated by a percolation threshold. An effective-medium theory for the conductivity and for the Hall effect was applied to handle several classes of materials undergoing metal-nonmetal transition via the inhomogeneous transport regime.

AB - The existence is proposed of an inhomogeneous transport regime in disordered materials in which gradual metal-semiconductor transition occurs. The material may be viewed as consisting of a random microscopic mixture of metallic and semiconducting regions, the density of states is reduced by the allowed (metallic) volume fraction, C(E//F), at the Fermi energy. The inhomogeneous regime is subdivided into pseudometallic and pseudosemiconductor parts separated by a percolation threshold. An effective-medium theory for the conductivity and for the Hall effect was applied to handle several classes of materials undergoing metal-nonmetal transition via the inhomogeneous transport regime.

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SP - 167

EP - 176

Y2 - 3 September 1973 through 8 September 1973

ER -

CONTINUOUS METAL-NONMETAL TRANSITION IN DISORDERED MATERIALS.

Abstract

Conference

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