TY - JOUR
T1 - Contact size-dependent switching instabilities in HfO2 RRAM
AU - Baikov, Pavel
AU - Ranganathan, Kamalakannan
AU - Goldfarb, Ilan
AU - Ruzin, Arie
N1 - Publisher Copyright:
© 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2022/10
Y1 - 2022/10
N2 - A comprehensive understanding of the resistive switching mechanisms that activate REDOX-based random access memory devices is necessary to further enhance their performance and reliability. In this article, devices of two different sizes were fabricated by magnetron sputtering and tested by potential sweeps and pulses. Reproducible memristive characteristics for HfOx-based devices were obtained. The contact geometry was shown to play a critical role in the process dynamics and device characteristics. Moderate to high ON/OFF ratios were obtained for all the devices. All the devices exhibited bipolar memristive behavior consistent with combined electric field and temperature-dependent oxygen migration in the filament formation mechanism.
AB - A comprehensive understanding of the resistive switching mechanisms that activate REDOX-based random access memory devices is necessary to further enhance their performance and reliability. In this article, devices of two different sizes were fabricated by magnetron sputtering and tested by potential sweeps and pulses. Reproducible memristive characteristics for HfOx-based devices were obtained. The contact geometry was shown to play a critical role in the process dynamics and device characteristics. Moderate to high ON/OFF ratios were obtained for all the devices. All the devices exhibited bipolar memristive behavior consistent with combined electric field and temperature-dependent oxygen migration in the filament formation mechanism.
UR - http://www.scopus.com/inward/record.url?scp=85138146452&partnerID=8YFLogxK
U2 - 10.1007/s10854-022-09002-1
DO - 10.1007/s10854-022-09002-1
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AN - SCOPUS:85138146452
SN - 0957-4522
VL - 33
SP - 22230
EP - 22243
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 28
ER -