Contact size-dependent switching instabilities in HfO2 RRAM

Pavel Baikov, Kamalakannan Ranganathan, Ilan Goldfarb, Arie Ruzin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


A comprehensive understanding of the resistive switching mechanisms that activate REDOX-based random access memory devices is necessary to further enhance their performance and reliability. In this article, devices of two different sizes were fabricated by magnetron sputtering and tested by potential sweeps and pulses. Reproducible memristive characteristics for HfOx-based devices were obtained. The contact geometry was shown to play a critical role in the process dynamics and device characteristics. Moderate to high ON/OFF ratios were obtained for all the devices. All the devices exhibited bipolar memristive behavior consistent with combined electric field and temperature-dependent oxygen migration in the filament formation mechanism.

Original languageEnglish
Pages (from-to)22230-22243
Number of pages14
JournalJournal of Materials Science: Materials in Electronics
Issue number28
StatePublished - Oct 2022


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