Construction and operation of sub-10 nm vertical molecular transistors

Elad Mentovich; Shachar Richter

doi:10.1109/INEC.2010.5424686

Construction and operation of sub-10 nm vertical molecular transistors

Elad Mentovich, Shachar Richter^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present a novel type of nano device: the sub-10 nm vertical molecular transistor. This device can be fabricated using conventional lithographic methods and in mass production. We use this transistor to explore the transport mechanism of various molecular systems such molecular quantum dots and doped proteins.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	646-647
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424686
State	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 3 Jan 2010 → 8 Jan 2010

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	3/01/10 → 8/01/10

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10.1109/INEC.2010.5424686

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title = "Construction and operation of sub-10 nm vertical molecular transistors",

abstract = "We present a novel type of nano device: the sub-10 nm vertical molecular transistor. This device can be fabricated using conventional lithographic methods and in mass production. We use this transistor to explore the transport mechanism of various molecular systems such molecular quantum dots and doped proteins.",

author = "Elad Mentovich and Shachar Richter",

year = "2010",

doi = "10.1109/INEC.2010.5424686",

language = "אנגלית",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "646--647",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

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Mentovich, E & Richter, S 2010, Construction and operation of sub-10 nm vertical molecular transistors. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424686, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 646-647, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 3/01/10. https://doi.org/10.1109/INEC.2010.5424686

Construction and operation of sub-10 nm vertical molecular transistors. / Mentovich, Elad; Richter, Shachar.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 646-647 5424686 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Construction and operation of sub-10 nm vertical molecular transistors

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