Constructing band diagrams of semiconductor heterojunctions

M. Leibovitch*, L. Kronik, E. Fefer, V. Korobov, Yoram Shapira

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


A novel approach for constructing the band diagrams of semiconductor heterojunctions is discussed and illustrated. It is based on a simple measurement of band discontinuities, Debye length and the width of the space-charge region at the heterojunction interface. Monitoring the changes in the surface potential during heterojunction formation makes it possible to identify the contributions of the interface states and dipole. The approach is illustrated by the results of experiments performed on the InP/In2O3 heterojunction.

Original languageEnglish
Pages (from-to)457
Number of pages1
JournalApplied Physics Letters
StatePublished - 1995


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