TY - JOUR
T1 - Conductivity of Weakly Insulating Amorphous Nickel-Silicon Films below the Metal-Insulator Transition
AU - Heines, A.
AU - Karpovski, M.
AU - Pilosof, M.
AU - Witcomb, M.
AU - Rosenbaum, R.
PY - 1998/1
Y1 - 1998/1
N2 - The electronic conductivity has been measured in homogeneous, weakly insulating, amorphous nickel-silicon films located just below the metal-insulator transition (MIT). The conductivity follows a simple CTz power law dependence with z ≈ 1/2 over a large temperature interval. The CTz behavior can be explained using the scaling theory suggested by Di Castro. A Mott variable-range hopping law cannot be fitted successfully through the zero field data.
AB - The electronic conductivity has been measured in homogeneous, weakly insulating, amorphous nickel-silicon films located just below the metal-insulator transition (MIT). The conductivity follows a simple CTz power law dependence with z ≈ 1/2 over a large temperature interval. The CTz behavior can be explained using the scaling theory suggested by Di Castro. A Mott variable-range hopping law cannot be fitted successfully through the zero field data.
UR - http://www.scopus.com/inward/record.url?scp=0347091218&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1521-3951(199801)205:1<237::AID-PSSB237>3.0.CO;2-W
DO - 10.1002/(SICI)1521-3951(199801)205:1<237::AID-PSSB237>3.0.CO;2-W
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AN - SCOPUS:0347091218
SN - 0370-1972
VL - 205
SP - 237
EP - 240
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
IS - 1
ER -