Conduction processes in crystalline NixSi1-x films

Carmit Segal*, Alexander Gladkikh, Moshe Pilosof, Haim Behar, Mike Witcomb, Ralph Rosenbaum

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The electrical conductivity and magnetoconductance (MC) have been measured in crystalline nickel-silicon (c-NixSi1-x) films as a function of nickel content, x. An abrupt decrease in the conductivity is observed at the metal-insulator transition where xc ≈ 13.5 at.% Ni. The discontinuity is explained in terms of a percolation model. Above 4 K, the magnetoconductance (MC) is negative and arises from an electron-electron interaction contribution and a weak-localization contribution involving strong spin-orbit scattering. Below 4 K, the magnetoconductance rapidly becomes positive. These low-temperature MC data can be explained using a model of electrons scattering from superparamagnetic particles, first introduced by Gittleman et al.

Original languageEnglish
Pages (from-to)123-134
Number of pages12
JournalJournal of Physics Condensed Matter
Volume10
Issue number1
DOIs
StatePublished - 12 Jan 1998

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