TY - JOUR
T1 - Conduction processes in crystalline NixSi1-x films
AU - Segal, Carmit
AU - Gladkikh, Alexander
AU - Pilosof, Moshe
AU - Behar, Haim
AU - Witcomb, Mike
AU - Rosenbaum, Ralph
PY - 1998/1/12
Y1 - 1998/1/12
N2 - The electrical conductivity and magnetoconductance (MC) have been measured in crystalline nickel-silicon (c-NixSi1-x) films as a function of nickel content, x. An abrupt decrease in the conductivity is observed at the metal-insulator transition where xc ≈ 13.5 at.% Ni. The discontinuity is explained in terms of a percolation model. Above 4 K, the magnetoconductance (MC) is negative and arises from an electron-electron interaction contribution and a weak-localization contribution involving strong spin-orbit scattering. Below 4 K, the magnetoconductance rapidly becomes positive. These low-temperature MC data can be explained using a model of electrons scattering from superparamagnetic particles, first introduced by Gittleman et al.
AB - The electrical conductivity and magnetoconductance (MC) have been measured in crystalline nickel-silicon (c-NixSi1-x) films as a function of nickel content, x. An abrupt decrease in the conductivity is observed at the metal-insulator transition where xc ≈ 13.5 at.% Ni. The discontinuity is explained in terms of a percolation model. Above 4 K, the magnetoconductance (MC) is negative and arises from an electron-electron interaction contribution and a weak-localization contribution involving strong spin-orbit scattering. Below 4 K, the magnetoconductance rapidly becomes positive. These low-temperature MC data can be explained using a model of electrons scattering from superparamagnetic particles, first introduced by Gittleman et al.
UR - http://www.scopus.com/inward/record.url?scp=0000393137&partnerID=8YFLogxK
U2 - 10.1088/0953-8984/10/1/014
DO - 10.1088/0953-8984/10/1/014
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AN - SCOPUS:0000393137
SN - 0953-8984
VL - 10
SP - 123
EP - 134
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
IS - 1
ER -