TY - JOUR
T1 - Conduction centers in a Ta2O5-δ Fermi glass
AU - Goldfarb, Ilan
AU - Williams, R. Stanley
N1 - Funding Information:
This research was supported in part by the SyNAPSE program of the Defense Advanced Research Projects Agency under contract HR0011-09-3-0001. The views, opinions, and/or findings contained in this article are those of the authors and should not be interpreted as representing the official views or policies, either expressed or implied, of the Defense Advanced Research Projects Agency or the Department of Defense. The authors gratefully acknowledge technical assistance of D. A. A. Ohlberg.
PY - 2014/2
Y1 - 2014/2
N2 - We compare our photoemission spectra with the calculated energy spectra of oxygen vacancies in Ta oxide to identify the defects responsible for the formation of a band in the gap of a Ta oxide-based memristor. We have previously explained transitions between high and low resistance states in a memristor conducting channel under bias reversal by accumulation and depletion of oxygen in the channel. Oxidation leads to a higher resistance due to sparser conduction centers for the electrons to hop between. Here, we show that they are likely due to neutral oxygen vacancies located at 'in-plane' sites of the Ta-O polyhedra.
AB - We compare our photoemission spectra with the calculated energy spectra of oxygen vacancies in Ta oxide to identify the defects responsible for the formation of a band in the gap of a Ta oxide-based memristor. We have previously explained transitions between high and low resistance states in a memristor conducting channel under bias reversal by accumulation and depletion of oxygen in the channel. Oxidation leads to a higher resistance due to sparser conduction centers for the electrons to hop between. Here, we show that they are likely due to neutral oxygen vacancies located at 'in-plane' sites of the Ta-O polyhedra.
UR - http://www.scopus.com/inward/record.url?scp=84893713470&partnerID=8YFLogxK
U2 - 10.1007/s00339-013-8162-9
DO - 10.1007/s00339-013-8162-9
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AN - SCOPUS:84893713470
SN - 0947-8396
VL - 114
SP - 287
EP - 289
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 2
ER -