We have observed and studied ballistic one-dimensional (1D) electron transport in V-grooved (Formula presented) heterostructures. In two different regimes of quantum wire confinement the conductance varies in a steplike manner, with the number of populated 1D subbands controlled by a gate voltage. For weak lateral confinement, the conductance steps nearly attain the (Formula presented) value, whereas for stronger confinement the values of the conductance steps are suppressed. Our results suggest that a poor coupling between the 1D states of the wire and the 2D states of the reservoirs outside the gated region is responsible for the conductance suppression for strong lateral confinement.
|Physical Review B - Condensed Matter and Materials Physics
|Published - 1999