TY - JOUR
T1 - Computer simulation and AFM characterization of standard and irradiated Si PIN devices
AU - Ruzin, Arie
AU - Torchinsky, I.
N1 - Funding Information:
This research partly benefited from ISF equipment grant # 9034/02-ʶ.
PY - 2006/1
Y1 - 2006/1
N2 - In this study we present computer simulations and experimental results of electric field distribution inside silicon PIN devices before and after the introduction of radiation-induced damage. The investigated devices were irradiated with 24 GeV/c protons and characterized using atomic force microscopy based methods. The topic of "type inversion" of irradiated silicon devices is simulated using commercial TCAD software. The results of surface potential difference measured by atomic force microscopy on non-irradiated devices are in good agreement with the simulated results for low interface charge case.
AB - In this study we present computer simulations and experimental results of electric field distribution inside silicon PIN devices before and after the introduction of radiation-induced damage. The investigated devices were irradiated with 24 GeV/c protons and characterized using atomic force microscopy based methods. The topic of "type inversion" of irradiated silicon devices is simulated using commercial TCAD software. The results of surface potential difference measured by atomic force microscopy on non-irradiated devices are in good agreement with the simulated results for low interface charge case.
UR - http://www.scopus.com/inward/record.url?scp=27944483735&partnerID=8YFLogxK
U2 - 10.1016/j.nuclphysbps.2004.07.007
DO - 10.1016/j.nuclphysbps.2004.07.007
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AN - SCOPUS:27944483735
SN - 0920-5632
VL - 150
SP - 172
EP - 176
JO - Nuclear Physics B - Proceedings Supplements
JF - Nuclear Physics B - Proceedings Supplements
IS - 1-3
ER -