TY - JOUR

T1 - Computation of Bipolar Transistor Base Parameters For General Distribution of Impurities in Base

AU - Gover, Avraham

AU - Grinberc, Jan

AU - Seidman, Ady

PY - 1972/8

Y1 - 1972/8

N2 - A procedure is suggested by which dc and ac base gain parameters can be computed for general impurity distributions in the base. The procedure consists of solving the current equation as series in the recombination time (1/τ). The series expansion coefficients are computed for a Gaussian distribution up to first order, along with the resulting base alpha transport factor and the transit time. Mobility variation with impurity concentration is also taken into account. Explicit expressions for cutoff frequencies and excess phase shift (ωT, ωa, ω8, m) are developed using the coefficients of the series expansion up to the second order. Computation of these parameters for the case of an exponential distribution, with and without assumption of diffusion coefficient variation, results in new expressions and values.

AB - A procedure is suggested by which dc and ac base gain parameters can be computed for general impurity distributions in the base. The procedure consists of solving the current equation as series in the recombination time (1/τ). The series expansion coefficients are computed for a Gaussian distribution up to first order, along with the resulting base alpha transport factor and the transit time. Mobility variation with impurity concentration is also taken into account. Explicit expressions for cutoff frequencies and excess phase shift (ωT, ωa, ω8, m) are developed using the coefficients of the series expansion up to the second order. Computation of these parameters for the case of an exponential distribution, with and without assumption of diffusion coefficient variation, results in new expressions and values.

UR - http://www.scopus.com/inward/record.url?scp=0015387754&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1972.17526

DO - 10.1109/T-ED.1972.17526

M3 - מאמר

AN - SCOPUS:0015387754

VL - 19

SP - 967

EP - 975

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 8

ER -