Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja; Christophe Raynaud; Camille Sonneville; Atse Julien Eric N'Dohi; Hervé Morel; Luong Viet Phung; Thi Huong Ngo; Philippe De Mierry; Eric Frayssinet; Hassan Maher; Josiane Tasselli; Karine Isoird; Frédéric Morancho; Yvon Cordier; Dominique Planson

doi:10.1016/j.mejo.2022.105575

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja^*, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes (SBDs) fabricated on free-standing GaN substrates. The GaN active layer properties are evaluated by atomic force microscopy (AFM), secondary-ion mass spectrometry (SIMS), micro-Raman spectroscopy, cathodoluminescence (CL), and deep-level transient Fourier spectroscopy (DLTFS). The GaN SBDs exhibit near-unity ideality factor (n = 1.1), promising Schottky barrier height (SBH) of Φ_B = 0.82 eV, low turn-on voltage ∼0.56 V, leakage current density of J_R < 5.5 × 10⁻⁶ Acm⁻² at −100 V, breakdown voltage V_BR < −200 V, and less interface state density (N_SS < 5 × 10¹² eV⁻¹ cm⁻²) at the Ni/GaN Schottky contact. The forward and reverse current transport mechanisms of the SBD are identified by fitting analysis of measured J-V. Weak temperature dependence of Φ_B and n is detected from I–V-T measurements. Similar traps at E_C - 0.18 eV and E_C - 0.56 are identified in the various SBDs from DLTFS, signifying that these traps are omnipresent defects in the epilayer.

Original language	English
Article number	105575
Journal	Microelectronics Journal
Volume	128
DOIs	https://doi.org/10.1016/j.mejo.2022.105575
State	Published - Oct 2022
Externally published	Yes

Keywords

Current transport
DLTFS
Defects
Free-standing GaN
Material characterization
Schottky barrier diode

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10.1016/j.mejo.2022.105575

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Raja, P. V., Raynaud, C., Sonneville, C., Eric N'Dohi, A. J., Morel, H., Phung, L. V., Ngo, T. H., De Mierry, P., Frayssinet, E., Maher, H., Tasselli, J., Isoird, K., Morancho, F., Cordier, Y., & Planson, D. (2022). Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. Microelectronics Journal, 128, Article 105575. https://doi.org/10.1016/j.mejo.2022.105575

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title = "Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes",

abstract = "This paper reports comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes (SBDs) fabricated on free-standing GaN substrates. The GaN active layer properties are evaluated by atomic force microscopy (AFM), secondary-ion mass spectrometry (SIMS), micro-Raman spectroscopy, cathodoluminescence (CL), and deep-level transient Fourier spectroscopy (DLTFS). The GaN SBDs exhibit near-unity ideality factor (n = 1.1), promising Schottky barrier height (SBH) of ΦB = 0.82 eV, low turn-on voltage ∼0.56 V, leakage current density of JR < 5.5 × 10−6 Acm−2 at −100 V, breakdown voltage VBR < −200 V, and less interface state density (NSS < 5 × 1012 eV−1 cm−2) at the Ni/GaN Schottky contact. The forward and reverse current transport mechanisms of the SBD are identified by fitting analysis of measured J-V. Weak temperature dependence of ΦB and n is detected from I–V-T measurements. Similar traps at EC - 0.18 eV and EC - 0.56 are identified in the various SBDs from DLTFS, signifying that these traps are omnipresent defects in the epilayer.",

keywords = "Current transport, DLTFS, Defects, Free-standing GaN, Material characterization, Schottky barrier diode",

author = "Raja, {P. Vigneshwara} and Christophe Raynaud and Camille Sonneville and {Eric N'Dohi}, {Atse Julien} and Herv{\'e} Morel and Phung, {Luong Viet} and Ngo, {Thi Huong} and {De Mierry}, Philippe and Eric Frayssinet and Hassan Maher and Josiane Tasselli and Karine Isoird and Fr{\'e}d{\'e}ric Morancho and Yvon Cordier and Dominique Planson",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2022",

month = oct,

doi = "10.1016/j.mejo.2022.105575",

language = "אנגלית",

volume = "128",

journal = "Microelectronics Journal",

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T1 - Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

AU - Raja, P. Vigneshwara

AU - Raynaud, Christophe

AU - Sonneville, Camille

AU - Eric N'Dohi, Atse Julien

AU - Morel, Hervé

AU - Phung, Luong Viet

AU - Ngo, Thi Huong

AU - De Mierry, Philippe

AU - Frayssinet, Eric

AU - Maher, Hassan

AU - Tasselli, Josiane

AU - Isoird, Karine

AU - Morancho, Frédéric

AU - Cordier, Yvon

AU - Planson, Dominique

PY - 2022/10

Y1 - 2022/10

N2 - This paper reports comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes (SBDs) fabricated on free-standing GaN substrates. The GaN active layer properties are evaluated by atomic force microscopy (AFM), secondary-ion mass spectrometry (SIMS), micro-Raman spectroscopy, cathodoluminescence (CL), and deep-level transient Fourier spectroscopy (DLTFS). The GaN SBDs exhibit near-unity ideality factor (n = 1.1), promising Schottky barrier height (SBH) of ΦB = 0.82 eV, low turn-on voltage ∼0.56 V, leakage current density of JR < 5.5 × 10−6 Acm−2 at −100 V, breakdown voltage VBR < −200 V, and less interface state density (NSS < 5 × 1012 eV−1 cm−2) at the Ni/GaN Schottky contact. The forward and reverse current transport mechanisms of the SBD are identified by fitting analysis of measured J-V. Weak temperature dependence of ΦB and n is detected from I–V-T measurements. Similar traps at EC - 0.18 eV and EC - 0.56 are identified in the various SBDs from DLTFS, signifying that these traps are omnipresent defects in the epilayer.

AB - This paper reports comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes (SBDs) fabricated on free-standing GaN substrates. The GaN active layer properties are evaluated by atomic force microscopy (AFM), secondary-ion mass spectrometry (SIMS), micro-Raman spectroscopy, cathodoluminescence (CL), and deep-level transient Fourier spectroscopy (DLTFS). The GaN SBDs exhibit near-unity ideality factor (n = 1.1), promising Schottky barrier height (SBH) of ΦB = 0.82 eV, low turn-on voltage ∼0.56 V, leakage current density of JR < 5.5 × 10−6 Acm−2 at −100 V, breakdown voltage VBR < −200 V, and less interface state density (NSS < 5 × 1012 eV−1 cm−2) at the Ni/GaN Schottky contact. The forward and reverse current transport mechanisms of the SBD are identified by fitting analysis of measured J-V. Weak temperature dependence of ΦB and n is detected from I–V-T measurements. Similar traps at EC - 0.18 eV and EC - 0.56 are identified in the various SBDs from DLTFS, signifying that these traps are omnipresent defects in the epilayer.

KW - Current transport

KW - DLTFS

KW - Defects

KW - Free-standing GaN

KW - Material characterization

KW - Schottky barrier diode

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VL - 128

JO - Microelectronics Journal

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ER -

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

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