TY - JOUR
T1 - Comparison of bulk and interface generation in silicon PIN detectors
AU - Ruzin, A.
AU - Marunko, S.
AU - Tilchyn, T.
N1 - Funding Information:
The research was conducted with a financial support of the Israeli Ministry of Industry and Commerce and Jordan Valley Applied Radiation Inc. We also express our gratitude to Micron Semiconductors, ITE and SINTEF detector manufacturers for their cooperation.
PY - 2003/10/11
Y1 - 2003/10/11
N2 - Thermal activation energies of bulk and interface-generated currents for high-resistivity silicon detectors are presented and compared. In non-irradiated devices it is shown that the bulk generation activation energy is strongly dependent on the processing technology, with no significant influence of material resistivity. The activation energies of the interface-generated currents on the other hand are shown to be process, resistivity, and orientation independent. The concentration cross-section products of both bulk and interface-generation centers are shown to be process dependent. Samples with resistivity range of 2-28 kΩ cm and orientations 〈1 1 1〉 and 〈1 0 0〉 were used. The activation energies of the current generating centers of proton-irradiated samples are presented.
AB - Thermal activation energies of bulk and interface-generated currents for high-resistivity silicon detectors are presented and compared. In non-irradiated devices it is shown that the bulk generation activation energy is strongly dependent on the processing technology, with no significant influence of material resistivity. The activation energies of the interface-generated currents on the other hand are shown to be process, resistivity, and orientation independent. The concentration cross-section products of both bulk and interface-generation centers are shown to be process dependent. Samples with resistivity range of 2-28 kΩ cm and orientations 〈1 1 1〉 and 〈1 0 0〉 were used. The activation energies of the current generating centers of proton-irradiated samples are presented.
KW - Activation energy
KW - Gated diodes
KW - Interface generation
KW - Si/SiO interface
UR - http://www.scopus.com/inward/record.url?scp=0142063493&partnerID=8YFLogxK
U2 - 10.1016/S0168-9002(03)01873-4
DO - 10.1016/S0168-9002(03)01873-4
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AN - SCOPUS:0142063493
SN - 0168-9002
VL - 512
SP - 21
EP - 29
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 1-2
T2 - Proceedings of the 9th European Symposium on Semiconductor
Y2 - 23 July 2002 through 27 July 2002
ER -