Coherent radiation from a broad area semiconductor laser in an external cavity

R. G. Waarts; A. Hardy; D. Mehuys; W. Streifer; D. F. Welch

doi:10.1117/12.18253

Coherent radiation from a broad area semiconductor laser in an external cavity

R. G. Waarts, A. Hardy, D. Mehuys, W. Streifer, D. F. Welch

Spectra Diode Laboratories

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We have investigated a compact external cavity configuration consisting of a gain guided array, a graded index lens and a mode selective mirror. Results obtained from this external cavity configuration show 410 mW total power (CW) with a diffraction limited far field pattern.

Original language	English
Pages (from-to)	172-178
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1219
DOIs	https://doi.org/10.1117/12.18253
State	Published - 1 May 1990
Externally published	Yes
Event	Laser Diode Technology and Applications II 1990 - Los Angeles, United States Duration: 14 Jan 1990 → …

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title = "Coherent radiation from a broad area semiconductor laser in an external cavity",

abstract = "We have investigated a compact external cavity configuration consisting of a gain guided array, a graded index lens and a mode selective mirror. Results obtained from this external cavity configuration show 410 mW total power (CW) with a diffraction limited far field pattern.",

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Coherent radiation from a broad area semiconductor laser in an external cavity

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