CMOS Compatible Electrostatically Formed Nanowire Transistor for Efficient Sensing of Temperature

Klimentiy Shimanovich, Tom Coen, Yonatan Vaknin, Alex Henning, Joseph Hayon, Yakov Roizin, Yossi Rosenwaks

Research output: Contribution to journalArticlepeer-review

Abstract

A novel electrostatically formed nano-wire (EFN) transistor for temperature sensing is presented. The device is a silicon-on-insulator multigate field-effect transistor, in which a nanowire-shaped conducting channel vertical position and area are controlled by the bias applied to the back gate, and two junction-side gates. Our measurements depict temperature sensitivity of 7.7%/K for EFN transistors which is among the best reported values for semiconductor temperature sensing devices TMOS and FET's. Optimal operational voltage biases and currents for the EFN transistor regimes are evaluated from measurements and analyzed using three dimensional (3D) electrostatic device simulations and developed analytical model.

Original languageEnglish
Article number8000690
Pages (from-to)3836-3840
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume64
Issue number9
DOIs
StatePublished - Sep 2017

Keywords

  • CMOS temperature sensor
  • electrostatically formed nanowire (EFN)
  • multiple gates field-effect transistor

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