Charge loss mechanisms in a localized trapping based nonvolatile memory device

Yael Shur; Yosi Shacham-Diamand; Eli Lusky; Boaz Eitan; Assaf Shappir

doi:10.1109/EEEI.2006.321104

Charge loss mechanisms in a localized trapping based nonvolatile memory device

Yael Shur^*
, Yosi Shacham-Diamand
, Eli Lusky
, Boaz Eitan
, Assaf Shappir

^*Corresponding author for this work

Department of Electrical Engineering - Physical Eng.

Tel Aviv University
Saifun Semiconductors Ltd.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2006 IEEE 24th Convention of Electrical and Electronics Engineers in Israel, IEEEI
Pages	364-365
Number of pages	2
DOIs	https://doi.org/10.1109/EEEI.2006.321104
State	Published - 2006
Event	2006 IEEE 24th Convention of Electrical and Electronics Engineers in Israel, IEEEI - Eilat, Israel Duration: 15 Nov 2006 → 17 Nov 2006

Publication series

Name	IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings

Conference

Conference	2006 IEEE 24th Convention of Electrical and Electronics Engineers in Israel, IEEEI
Country/Territory	Israel
City	Eilat
Period	15/11/06 → 17/11/06

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10.1109/EEEI.2006.321104

Cite this

Shur, Y., Shacham-Diamand, Y., Lusky, E., Eitan, B., & Shappir, A. (2006). Charge loss mechanisms in a localized trapping based nonvolatile memory device. In 2006 IEEE 24th Convention of Electrical and Electronics Engineers in Israel, IEEEI (pp. 364-365). Article 4115312 (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings). https://doi.org/10.1109/EEEI.2006.321104

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title = "Charge loss mechanisms in a localized trapping based nonvolatile memory device",

author = "Yael Shur and Yosi Shacham-Diamand and Eli Lusky and Boaz Eitan and Assaf Shappir",

year = "2006",

doi = "10.1109/EEEI.2006.321104",

language = "אנגלית",

isbn = "1424402301",

series = "IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings",

pages = "364--365",

booktitle = "2006 IEEE 24th Convention of Electrical and Electronics Engineers in Israel, IEEEI",

note = "2006 IEEE 24th Convention of Electrical and Electronics Engineers in Israel, IEEEI ; Conference date: 15-11-2006 Through 17-11-2006",

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Shur, Y, Shacham-Diamand, Y, Lusky, E, Eitan, B & Shappir, A 2006, Charge loss mechanisms in a localized trapping based nonvolatile memory device. in 2006 IEEE 24th Convention of Electrical and Electronics Engineers in Israel, IEEEI., 4115312, IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings, pp. 364-365, 2006 IEEE 24th Convention of Electrical and Electronics Engineers in Israel, IEEEI, Eilat, Israel, 15/11/06. https://doi.org/10.1109/EEEI.2006.321104

Charge loss mechanisms in a localized trapping based nonvolatile memory device. / Shur, Yael; Shacham-Diamand, Yosi; Lusky, Eli et al.
2006 IEEE 24th Convention of Electrical and Electronics Engineers in Israel, IEEEI. 2006. p. 364-365 4115312 (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Shacham-Diamand, Yosi

AU - Lusky, Eli

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AU - Shappir, Assaf

PY - 2006

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Charge loss mechanisms in a localized trapping based nonvolatile memory device

Publication series

Conference

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