Characterization of semiconducting iron disilicide obtained by LRP/CVD

J. L. Regolini; F. Trincat; I. Sagnes; D. Bensahel; Y. Shapira; G. Brémond

doi:10.1109/16.108230

Characterization of semiconducting iron disilicide obtained by LRP/CVD

J. L. Regolini, F. Trincat, I. Sagnes, D. Bensahel, Y. Shapira, G. Brémond

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Abstract

A solid iron source is used in an LRP system to deposit P-FeSi₂ selectively and epitaxially onto patterned silicon wafers. The obtained layers of stoichiometric composition show two main photoluminescence emission bands (at 0.79 and 0.94 eV) and an extrinsic conductivity energy level (at 0.10 eV). The results are presented and discussed as a function of the layer growth temperature.

Original language	English
Pages (from-to)	200-201
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	1
DOIs	https://doi.org/10.1109/16.108230
State	Published - Jan 1992
Externally published	Yes

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abstract = "A solid iron source is used in an LRP system to deposit P-FeSi2 selectively and epitaxially onto patterned silicon wafers. The obtained layers of stoichiometric composition show two main photoluminescence emission bands (at 0.79 and 0.94 eV) and an extrinsic conductivity energy level (at 0.10 eV). The results are presented and discussed as a function of the layer growth temperature.",

author = "Regolini, {J. L.} and F. Trincat and I. Sagnes and D. Bensahel and Y. Shapira and G. Br{\'e}mond",

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AU - Regolini, J. L.

AU - Trincat, F.

AU - Sagnes, I.

AU - Bensahel, D.

AU - Shapira, Y.

AU - Brémond, G.

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N2 - A solid iron source is used in an LRP system to deposit P-FeSi2 selectively and epitaxially onto patterned silicon wafers. The obtained layers of stoichiometric composition show two main photoluminescence emission bands (at 0.79 and 0.94 eV) and an extrinsic conductivity energy level (at 0.10 eV). The results are presented and discussed as a function of the layer growth temperature.

AB - A solid iron source is used in an LRP system to deposit P-FeSi2 selectively and epitaxially onto patterned silicon wafers. The obtained layers of stoichiometric composition show two main photoluminescence emission bands (at 0.79 and 0.94 eV) and an extrinsic conductivity energy level (at 0.10 eV). The results are presented and discussed as a function of the layer growth temperature.

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Characterization of semiconducting iron disilicide obtained by LRP/CVD

Abstract

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