Characterization of semiconducting iron disilicide obtained by LRP/CVD

J. L. Regolini, F. Trincat, I. Sagnes, D. Bensahel, Y. Shapira, G. Brémond

Research output: Contribution to journalArticlepeer-review

Abstract

A solid iron source is used in an LRP system to deposit P-FeSi2 selectively and epitaxially onto patterned silicon wafers. The obtained layers of stoichiometric composition show two main photoluminescence emission bands (at 0.79 and 0.94 eV) and an extrinsic conductivity energy level (at 0.10 eV). The results are presented and discussed as a function of the layer growth temperature.

Original languageEnglish
Pages (from-to)200-201
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume39
Issue number1
DOIs
StatePublished - Jan 1992
Externally publishedYes

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