Characterization of quantum well structures using surface photovoltage spectroscopy

N. Ashkenasy*, M. Leibovitch, Y. Rosenwaks, Yoram Shapira

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


In this work a novel method to characterize quantum well (QW) structures and devices is presented. The method is based on the well-known surface photovoltage spectroscopy (SPS) and on numerical simulations. It is shown that the surface photovoltage is sensitive to the electron hole energy transition levels in the well layer as well as to features of other regions of the structure. The photovoltaic response as function of well width is numerically studied and is found to increase with decreasing well width. As a result of the spectra analysis growth parameters such as quantum well width and ternary layer composition (both of quantum well and cladding layers) are accurately determined. In addition, structure properties such as electric fields and effective carriers lifetime at the well are estimated. Finally it is shown that operating device parameters such the lasing wavelength may also be obtained. The results demonstrate the power of SPS as a characterization method for QW structures and devices in a contactless and non-destructive manner.

Original languageEnglish
Pages (from-to)125-132
Number of pages8
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1
StatePublished - 1 May 2000
Event3rd International Conference on Low Dimensional Structures and Devices (LDSD'99) - Antalya, Turkey
Duration: 15 Sep 199917 Sep 1999


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