TY - JOUR
T1 - Characterization of quantum well structures using surface photovoltage spectroscopy
AU - Ashkenasy, N.
AU - Leibovitch, M.
AU - Rosenwaks, Y.
AU - Shapira, Yoram
PY - 2000/5/1
Y1 - 2000/5/1
N2 - In this work a novel method to characterize quantum well (QW) structures and devices is presented. The method is based on the well-known surface photovoltage spectroscopy (SPS) and on numerical simulations. It is shown that the surface photovoltage is sensitive to the electron hole energy transition levels in the well layer as well as to features of other regions of the structure. The photovoltaic response as function of well width is numerically studied and is found to increase with decreasing well width. As a result of the spectra analysis growth parameters such as quantum well width and ternary layer composition (both of quantum well and cladding layers) are accurately determined. In addition, structure properties such as electric fields and effective carriers lifetime at the well are estimated. Finally it is shown that operating device parameters such the lasing wavelength may also be obtained. The results demonstrate the power of SPS as a characterization method for QW structures and devices in a contactless and non-destructive manner.
AB - In this work a novel method to characterize quantum well (QW) structures and devices is presented. The method is based on the well-known surface photovoltage spectroscopy (SPS) and on numerical simulations. It is shown that the surface photovoltage is sensitive to the electron hole energy transition levels in the well layer as well as to features of other regions of the structure. The photovoltaic response as function of well width is numerically studied and is found to increase with decreasing well width. As a result of the spectra analysis growth parameters such as quantum well width and ternary layer composition (both of quantum well and cladding layers) are accurately determined. In addition, structure properties such as electric fields and effective carriers lifetime at the well are estimated. Finally it is shown that operating device parameters such the lasing wavelength may also be obtained. The results demonstrate the power of SPS as a characterization method for QW structures and devices in a contactless and non-destructive manner.
UR - http://www.scopus.com/inward/record.url?scp=0033731568&partnerID=8YFLogxK
U2 - 10.1016/S0921-5107(99)00547-4
DO - 10.1016/S0921-5107(99)00547-4
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???
AN - SCOPUS:0033731568
SN - 0921-5107
VL - 74
SP - 125
EP - 132
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1
T2 - 3rd International Conference on Low Dimensional Structures and Devices (LDSD'99)
Y2 - 15 September 1999 through 17 September 1999
ER -