Characterization of interface states at III-V compound semiconductor-metal interfaces

L. Burstein*, J. Bregman, Yoram Shapira

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Surface photovoltage spectroscopy (SPS) has been used for direct measurements of the extrinsic surface states within the band gaps of p-InP (110) and (100) and n-GaAs(110) before and after Al and Au deposition. The observed metal-induced surface states are found to pin the Fermi level at monolayer coverages at Ev+0.83 eV for Au/p-InP(110), Ev+1.10 eV for Al/p-InP(110), Ec-0.94 eV for Au/n-GaAs(110), and Ec-0.80 eV for Al/n-GaAs(110). The Au/Al/p-InP(110) structure, studied for the first time using SPS provides evidence of strong Al clustering upon the InP surface. Chemically etched and UHV-cleaved p-InP surfaces and Au interfaces are also compared. The correlation between the observed energy state positions and electrically measured Schottky barrier heights is discussed.

Original languageEnglish
Pages (from-to)2312-2316
Number of pages5
JournalJournal of Applied Physics
Volume69
Issue number4
DOIs
StatePublished - 1991

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