Characterization of InP using Metal-Insulator-Semiconductor-Tunneling Microscopy (MISTM)

S. Richter, J. P. Garno, M. Geva, R. N. Kleiman

Research output: Contribution to journalConference articlepeer-review

Abstract

Metal-Insulator-Semiconductor Tunneling Microscopy is a new technique for creating a 2 dimensional map of the carrier concentration in a semiconductor. This is done by measuring the tunneling current between a conducting Atomic Force Microscope tip and a semiconductor sample. Here we present the application of this method to InP. By exploring the current voltage characteristics of p- and n-type InP over a large range of voltages and carrier concentrations we find they are well-described by Metal-Insulator-Semiconductor theory. A fitting procedure of this model to the data gave a maximum deviation of 5%.

Original languageEnglish
Pages (from-to)64-66
Number of pages3
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - 2000
Externally publishedYes
Event2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA
Duration: 14 May 200018 May 2000

Fingerprint

Dive into the research topics of 'Characterization of InP using Metal-Insulator-Semiconductor-Tunneling Microscopy (MISTM)'. Together they form a unique fingerprint.

Cite this