Abstract
Metal-Insulator-Semiconductor Tunneling Microscopy is a new technique for creating a 2 dimensional map of the carrier concentration in a semiconductor. This is done by measuring the tunneling current between a conducting Atomic Force Microscope tip and a semiconductor sample. Here we present the application of this method to InP. By exploring the current voltage characteristics of p- and n-type InP over a large range of voltages and carrier concentrations we find they are well-described by Metal-Insulator-Semiconductor theory. A fitting procedure of this model to the data gave a maximum deviation of 5%.
| Original language | English |
|---|---|
| Pages (from-to) | 64-66 |
| Number of pages | 3 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| State | Published - 2000 |
| Externally published | Yes |
| Event | 2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA Duration: 14 May 2000 → 18 May 2000 |