Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements

H. D. Xiong*, D. Heh, M. Gurfinkel, Q. Li, Y. Shapira, C. Richter, G. Bersuker, R. Choi, J. S. Suehle

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The electrically active defects in high-k/SiO2 dielectric stacks are examined using a combination of low frequency noise (LFN) and charge pumping (CP) methods. The volume trap profile in the stacks is obtained by modeling the drain current noise spectra and charge pumping currents, with each technique covering a different depth range. The LFN is dependent on both the high-k and interfacial (IL) SiO2 thicknesses while the CP current is mainly dependent on the IL thickness.

Original languageEnglish
Pages (from-to)2230-2234
Number of pages5
JournalMicroelectronic Engineering
Volume84
Issue number9-10
DOIs
StatePublished - Sep 2007
Externally publishedYes

Keywords

  • Border trap
  • Charge pumping
  • Depth profiling
  • Low frequency noise

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