Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements

H. D. Xiong; D. Heh; M. Gurfinkel; Q. Li; Y. Shapira; C. Richter; G. Bersuker; R. Choi; J. S. Suehle

doi:10.1016/j.mee.2007.04.094

Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements

H. D. Xiong^*, D. Heh, M. Gurfinkel, Q. Li, Y. Shapira, C. Richter, G. Bersuker, R. Choi, J. S. Suehle

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

The electrically active defects in high-k/SiO₂ dielectric stacks are examined using a combination of low frequency noise (LFN) and charge pumping (CP) methods. The volume trap profile in the stacks is obtained by modeling the drain current noise spectra and charge pumping currents, with each technique covering a different depth range. The LFN is dependent on both the high-k and interfacial (IL) SiO₂ thicknesses while the CP current is mainly dependent on the IL thickness.

Original language	English
Pages (from-to)	2230-2234
Number of pages	5
Journal	Microelectronic Engineering
Volume	84
Issue number	9-10
DOIs	https://doi.org/10.1016/j.mee.2007.04.094
State	Published - Sep 2007
Externally published	Yes

Keywords

Border trap
Charge pumping
Depth profiling
Low frequency noise

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10.1016/j.mee.2007.04.094

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title = "Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements",

abstract = "The electrically active defects in high-k/SiO2 dielectric stacks are examined using a combination of low frequency noise (LFN) and charge pumping (CP) methods. The volume trap profile in the stacks is obtained by modeling the drain current noise spectra and charge pumping currents, with each technique covering a different depth range. The LFN is dependent on both the high-k and interfacial (IL) SiO2 thicknesses while the CP current is mainly dependent on the IL thickness.",

keywords = "Border trap, Charge pumping, Depth profiling, Low frequency noise",

author = "Xiong, {H. D.} and D. Heh and M. Gurfinkel and Q. Li and Y. Shapira and C. Richter and G. Bersuker and R. Choi and Suehle, {J. S.}",

year = "2007",

month = sep,

doi = "10.1016/j.mee.2007.04.094",

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volume = "84",

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journal = "Microelectronic Engineering",

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TY - JOUR

T1 - Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements

AU - Xiong, H. D.

AU - Heh, D.

AU - Gurfinkel, M.

AU - Li, Q.

AU - Shapira, Y.

AU - Richter, C.

AU - Bersuker, G.

AU - Choi, R.

AU - Suehle, J. S.

PY - 2007/9

Y1 - 2007/9

N2 - The electrically active defects in high-k/SiO2 dielectric stacks are examined using a combination of low frequency noise (LFN) and charge pumping (CP) methods. The volume trap profile in the stacks is obtained by modeling the drain current noise spectra and charge pumping currents, with each technique covering a different depth range. The LFN is dependent on both the high-k and interfacial (IL) SiO2 thicknesses while the CP current is mainly dependent on the IL thickness.

AB - The electrically active defects in high-k/SiO2 dielectric stacks are examined using a combination of low frequency noise (LFN) and charge pumping (CP) methods. The volume trap profile in the stacks is obtained by modeling the drain current noise spectra and charge pumping currents, with each technique covering a different depth range. The LFN is dependent on both the high-k and interfacial (IL) SiO2 thicknesses while the CP current is mainly dependent on the IL thickness.

KW - Border trap

KW - Charge pumping

KW - Depth profiling

KW - Low frequency noise

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AN - SCOPUS:34248678731

SN - 0167-9317

VL - 84

SP - 2230

EP - 2234

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 9-10

ER -

Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements

Abstract

Keywords

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