CdZnTe photodiode arrays for medical imaging

R. Sudharsanan, T. Parodos, A. Ruzin, Y. Nemirovsky, N. H. Karam

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, we report on the design, fabrication, and performance of the first CdZnTe Schottky photodiode arrays for radiation detection. High pressure Bridgman-grown CdZnTe substrates with bulk resistivities in the range 108 to 1010ohm-cm were used. CdZnTe Schottky photodiodes were formed with In and Ti/Au contacts. Diode arrays with pixel sizes from 1000 × 1000 μm to 100 × 100 μm were fabricated. The diode's I-V characteristics exhibited low leakage current and high bulk resistivity; leakage current decreased as diode pixel size was reduced. Response of these detector arrays to high energy photons was uniform and their energy resolution improved with smaller pixel size.

Original languageEnglish
Pages (from-to)1318-1322
Number of pages5
JournalJournal of Electronic Materials
Volume25
Issue number8
DOIs
StatePublished - Aug 1996
Externally publishedYes

Keywords

  • CdZnTe Schottky photodiodes
  • CdZnTe gamma-ray detectors
  • Medical imaging
  • Radiation detectors

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