@article{21a5ed073cc84e2f93307ced0b62e34d,
title = "Cathodoluminescence studies of electron injection effects in p-type gallium oxide",
abstract = "It has recently been demonstrated that electron beam injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length with injection duration, followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) at meta-stable native defect levels in the material, which in turn blocks recombination through these levels. In this work, in contrast to previous studies, the effect of electron injection in p-type Ga2O3 was investigated using cathodoluminescence technique in situ in scanning electron microscope, thus providing insight into minority carrier lifetime behavior under electron beam irradiation. The activation energy of ∼0.3 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects.",
author = "Leonid Chernyak and Alfons Schulte and Li, {Jian Sian} and Chiang, {Chao Ching} and Fan Ren and Pearton, {Stephen J.} and Corinne Sartel and Vincent Sallet and Zeyu Chi and Yves Dumont and Ekaterine Chikoidze and Arie Ruzin",
note = "Publisher Copyright: {\textcopyright} 2024 Author(s).",
year = "2024",
month = aug,
day = "1",
doi = "10.1063/5.0220201",
language = "אנגלית",
volume = "14",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "American Institute of Physics",
number = "8",
}