TY - JOUR
T1 - Carrier recombination dynamics in Ga0.51In0.49P double-heterostructures up to 500 K
AU - Walker, Alexandre W.
AU - Shaked, Amit
AU - Dagan, Ronen
AU - Kribus, Abraham
AU - Rosenwaks, Yossi
AU - Ohlmann, Jens
AU - Lackner, David
AU - Dimroth, Frank
N1 - Publisher Copyright:
© 2020 IOP Publishing Ltd.
PY - 2020
Y1 - 2020
N2 - The bulk minority carrier lifetime and interface recombination velocity (IRV) in GaInP double-heterostructures (DHs) lattice matched to GaAs are extracted using time-resolved photoluminescence (PL) measured between 300 and 500 K. Effective lifetimes show a strong dependence on temperature for samples with insufficiently strong confinement potentials due to significant thermionic emission losses out of the DHs. An increased PL signal from the underlying GaAs layer relative to GaInP's PL at high temperatures supports this hypothesis. The impact is a shorter recombination lifetime which can be wrongly interpreted as a high IRV of up to 4500 cm s-1 at 500 K. These effects are investigated experimentally using samples of different barrier heights based on the Al-content in (Al x Ga1-x)0.51In0.49P. A larger barrier height is shown to inhibit thermionic emission out of the DH, thus revealing a more accurate IRV of 300 cm s-1 at 500 K. The results are then used to develop a correction procedure to extract a more accurate IRV at the barriers of the DH. Optoelectronic device simulations are used to gain insight into carrier dynamics as a function of temperature and the DH's barrier height, and confirm a strong inhibition of the thermionic emission losses as the Al-content is maximized in the barrier.
AB - The bulk minority carrier lifetime and interface recombination velocity (IRV) in GaInP double-heterostructures (DHs) lattice matched to GaAs are extracted using time-resolved photoluminescence (PL) measured between 300 and 500 K. Effective lifetimes show a strong dependence on temperature for samples with insufficiently strong confinement potentials due to significant thermionic emission losses out of the DHs. An increased PL signal from the underlying GaAs layer relative to GaInP's PL at high temperatures supports this hypothesis. The impact is a shorter recombination lifetime which can be wrongly interpreted as a high IRV of up to 4500 cm s-1 at 500 K. These effects are investigated experimentally using samples of different barrier heights based on the Al-content in (Al x Ga1-x)0.51In0.49P. A larger barrier height is shown to inhibit thermionic emission out of the DH, thus revealing a more accurate IRV of 300 cm s-1 at 500 K. The results are then used to develop a correction procedure to extract a more accurate IRV at the barriers of the DH. Optoelectronic device simulations are used to gain insight into carrier dynamics as a function of temperature and the DH's barrier height, and confirm a strong inhibition of the thermionic emission losses as the Al-content is maximized in the barrier.
KW - III-V semiconductors
KW - double-heterostructures
KW - interface recombination velocity
KW - minority carrier recombination lifetime
KW - photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=85083207285&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/ab708e
DO - 10.1088/1361-6641/ab708e
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AN - SCOPUS:85083207285
SN - 0268-1242
VL - 35
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 5
M1 - 055001
ER -