Carbon nanotube graphoepitaxy: Highly oriented growth by faceted nanosteps

Ariel Ismach; David Kantorovich; Ernesto Joselevich

doi:10.1021/ja052759m

Carbon nanotube graphoepitaxy: Highly oriented growth by faceted nanosteps

Ariel Ismach, David Kantorovich, Ernesto Joselevich

Research output: Contribution to journal › Article › peer-review

Abstract

Single-wall carbon nanotubes grow along self-assembled nanosteps of annealed miscut C-plane sapphire. Depending on the miscut orientation and annealing conditions, graphoepitaxy leads to the formation of either unprecedentedly straight and parallel nanotubes, with angular deviations as small as ±0.5°, or to wavy nanotubes loosely conformal to sawtooth-shaped faceted nanosteps.

Original language	English
Pages (from-to)	11554-11555
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	127
Issue number	33
DOIs	https://doi.org/10.1021/ja052759m
State	Published - 24 Aug 2005
Externally published	Yes

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10.1021/ja052759m

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@article{94210751dc394cde98b2b64da8b8747c,

title = "Carbon nanotube graphoepitaxy: Highly oriented growth by faceted nanosteps",

abstract = "Single-wall carbon nanotubes grow along self-assembled nanosteps of annealed miscut C-plane sapphire. Depending on the miscut orientation and annealing conditions, graphoepitaxy leads to the formation of either unprecedentedly straight and parallel nanotubes, with angular deviations as small as ±0.5°, or to wavy nanotubes loosely conformal to sawtooth-shaped faceted nanosteps.",

author = "Ariel Ismach and David Kantorovich and Ernesto Joselevich",

year = "2005",

month = aug,

day = "24",

doi = "10.1021/ja052759m",

language = "אנגלית",

volume = "127",

pages = "11554--11555",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "33",

}

TY - JOUR

T1 - Carbon nanotube graphoepitaxy

T2 - Highly oriented growth by faceted nanosteps

AU - Ismach, Ariel

AU - Kantorovich, David

AU - Joselevich, Ernesto

PY - 2005/8/24

Y1 - 2005/8/24

N2 - Single-wall carbon nanotubes grow along self-assembled nanosteps of annealed miscut C-plane sapphire. Depending on the miscut orientation and annealing conditions, graphoepitaxy leads to the formation of either unprecedentedly straight and parallel nanotubes, with angular deviations as small as ±0.5°, or to wavy nanotubes loosely conformal to sawtooth-shaped faceted nanosteps.

AB - Single-wall carbon nanotubes grow along self-assembled nanosteps of annealed miscut C-plane sapphire. Depending on the miscut orientation and annealing conditions, graphoepitaxy leads to the formation of either unprecedentedly straight and parallel nanotubes, with angular deviations as small as ±0.5°, or to wavy nanotubes loosely conformal to sawtooth-shaped faceted nanosteps.

UR - http://www.scopus.com/inward/record.url?scp=23944476614&partnerID=8YFLogxK

U2 - 10.1021/ja052759m

DO - 10.1021/ja052759m

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:23944476614

VL - 127

SP - 11554

EP - 11555

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 33

ER -

Carbon nanotube graphoepitaxy: Highly oriented growth by faceted nanosteps

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