Abstract
The refractive index N of lead-tin-telluride is calculated for frequencies near the fundamental absorption edge. The contribution to N from electron states near the band-edges is calculated more exactly than in previous works and a new expression for the contribution from the high frequency region is proposed. Good agreement is obtained between our calculations and experimental results. The change of N due to gain in injection laser is also calculated and it is shown that it cannot be neglected.
| Original language | English |
|---|---|
| Pages (from-to) | 1110-1114 |
| Number of pages | 5 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 20 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 1984 |