## Abstract

The band structure and the electron-phonon coupling are calculated for a σ-band hybridized with a δ_{1}-band using tight-binding parameters fit for V_{3}Si. The hybridization gives rise to a sharp peak in the electronic density of states near the state Γ_{12} of the δ_{1}-band. The variation of the parameter N(0)I^{2} (N(0) - the electronic density of states at the Fermi level, I^{2} - the electron-phonon coupling constant) is studied at the vicinity of the Γ_{12}(δ_{1}) peak. It is found that there is some compensation between N(0) and I^{2}; the narrow δ_{1}-band gives rise to a large value of N(0), but a small value of I^{2}; while the σ-band gives rise to a large value of I^{2}, but a small value of N(0). As a result, the product N(0)I^{2} does not follow the behavior of N(0) even qualitatively, and it possesses a maximum far from the peak in N(0). Following this calculation, and previous calculations for the δ_{2} and σ-bands, an approximate relationship is developed for the contribution λ_{i}to λ, coming from the various sub-bands of the 3d band, depending on the individual width of the sub-band, and its contribution to the density of states.

Original language | English |
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Pages (from-to) | 217-228 |

Number of pages | 12 |

Journal | Synthetic Metals |

Volume | 5 |

Issue number | 3-4 |

DOIs | |

State | Published - 1983 |

### Funding

Funders | Funder number |
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National Council for Research and Development, Israel and KFK |

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