Bulk changes in semiconductors using scanning probe microscopy: nm-size fabricated structures

Shachar Richter, Yishay Manassen, David Cahen

Research output: Contribution to journalArticlepeer-review

Abstract

Hemispherical (Formula presented) transistor structures ranging from 100 μm down to 0.05 μm in diameter are fabricated in (Formula presented) by application of a high electric field between a conducting diamond tip of an atomic force microscope and a (Formula presented) crystal. This leads to electromigration of Cu ions in the bulk of the material. The results of this thermally assisted process are the transistor structures. These are characterized by scanning spreading resistance microscopy. For large devices these results are compared and found to agree with those of “conventional” electron-beam-induced current ones. Removing several tens of atomic layers from the top surface of a structure does not affect the spreading resistance image of the device. This indicates the three-dimensional hemispherical nature of the structures.

Original languageEnglish
Pages (from-to)10877-10884
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number16
DOIs
StatePublished - 1999
Externally publishedYes

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