Bipolar charge transport and contact phenomena in Al2O3

Yu N. Novikov; A. A. Gismatulin; B. Hallac; Y. Roizin; V. A. Gritsenko

doi:10.1016/j.tsf.2023.140004

Bipolar charge transport and contact phenomena in Al₂O₃

Yu N. Novikov^*, A. A. Gismatulin, B. Hallac, Y. Roizin, V. A. Gritsenko

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The device quality amorphous alumina films (Al₂O₃) deposited in an industrial batch tool on different metal and semiconductor substrates were investigated and simulated. To describe the charge injection at an interface, the modified Lundstrom-Svensson approach was used. Metal-insulator-semiconductor structures having metal electrodes with large work function differences were characterized to reveal bulk conductivity mechanisms. Experimental results showed that the conductivity in a-Al₂O₃ films is limited by both bulk and interface conditions. Electrons and holes are involved in the charge transport. The charge transport in Al₂O₃ is satisfactorily described by the multiphonon mechanism of electron and hole trap ionization with thermal W_T = 1.5 eV and optical W_OPT = 3.0 eV trap ionization energies, respectively.

Original language	English
Article number	140004
Journal	Thin Solid Films
Volume	781
DOIs	https://doi.org/10.1016/j.tsf.2023.140004
State	Published - 30 Sep 2023
Externally published	Yes

Keywords

Alumina
Atomic layer deposition
Charge transport
Multiphonon ionization mechanism
Traps

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10.1016/j.tsf.2023.140004

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title = "Bipolar charge transport and contact phenomena in Al2O3",

abstract = "The device quality amorphous alumina films (Al2O3) deposited in an industrial batch tool on different metal and semiconductor substrates were investigated and simulated. To describe the charge injection at an interface, the modified Lundstrom-Svensson approach was used. Metal-insulator-semiconductor structures having metal electrodes with large work function differences were characterized to reveal bulk conductivity mechanisms. Experimental results showed that the conductivity in a-Al2O3 films is limited by both bulk and interface conditions. Electrons and holes are involved in the charge transport. The charge transport in Al2O3 is satisfactorily described by the multiphonon mechanism of electron and hole trap ionization with thermal WT = 1.5 eV and optical WOPT = 3.0 eV trap ionization energies, respectively.",

keywords = "Alumina, Atomic layer deposition, Charge transport, Multiphonon ionization mechanism, Traps",

author = "Novikov, {Yu N.} and Gismatulin, {A. A.} and B. Hallac and Y. Roizin and Gritsenko, {V. A.}",

note = "Publisher Copyright: {\textcopyright} 2023",

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doi = "10.1016/j.tsf.2023.140004",

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T1 - Bipolar charge transport and contact phenomena in Al2O3

AU - Novikov, Yu N.

AU - Gismatulin, A. A.

AU - Hallac, B.

AU - Roizin, Y.

AU - Gritsenko, V. A.

PY - 2023/9/30

Y1 - 2023/9/30

N2 - The device quality amorphous alumina films (Al2O3) deposited in an industrial batch tool on different metal and semiconductor substrates were investigated and simulated. To describe the charge injection at an interface, the modified Lundstrom-Svensson approach was used. Metal-insulator-semiconductor structures having metal electrodes with large work function differences were characterized to reveal bulk conductivity mechanisms. Experimental results showed that the conductivity in a-Al2O3 films is limited by both bulk and interface conditions. Electrons and holes are involved in the charge transport. The charge transport in Al2O3 is satisfactorily described by the multiphonon mechanism of electron and hole trap ionization with thermal WT = 1.5 eV and optical WOPT = 3.0 eV trap ionization energies, respectively.

AB - The device quality amorphous alumina films (Al2O3) deposited in an industrial batch tool on different metal and semiconductor substrates were investigated and simulated. To describe the charge injection at an interface, the modified Lundstrom-Svensson approach was used. Metal-insulator-semiconductor structures having metal electrodes with large work function differences were characterized to reveal bulk conductivity mechanisms. Experimental results showed that the conductivity in a-Al2O3 films is limited by both bulk and interface conditions. Electrons and holes are involved in the charge transport. The charge transport in Al2O3 is satisfactorily described by the multiphonon mechanism of electron and hole trap ionization with thermal WT = 1.5 eV and optical WOPT = 3.0 eV trap ionization energies, respectively.

KW - Alumina

KW - Atomic layer deposition

KW - Charge transport

KW - Multiphonon ionization mechanism

KW - Traps

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Bipolar charge transport and contact phenomena in Al₂O₃

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Keywords

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