Barrier-controlled low-threshold pnpn GaAs heterostructure laser

C. P. Lee, A. Gover, S. Margalit, I. Samid, A. Yariv

Research output: Contribution to journalArticlepeer-review

Abstract

Incorporation of GaAlAs potential barrier layers into the active regions of a heterostructure pnpn injection laser makes it possible to design Shockley diode lasers with low (3 kA/cm2) room-temperature threshold currents.

Original languageEnglish
Pages (from-to)535-538
Number of pages4
JournalApplied Physics Letters
Volume30
Issue number10
DOIs
StatePublished - 1977
Externally publishedYes

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