Barrier-controlled low-threshold pnpn GaAs heterostructure laser

C. P. Lee; A. Gover; S. Margalit; I. Samid; A. Yariv

doi:10.1063/1.89225

Barrier-controlled low-threshold pnpn GaAs heterostructure laser

C. P. Lee^*, A. Gover, S. Margalit, I. Samid, A. Yariv

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Incorporation of GaAlAs potential barrier layers into the active regions of a heterostructure pnpn injection laser makes it possible to design Shockley diode lasers with low (3 kA/cm²) room-temperature threshold currents.

Original language	English
Pages (from-to)	535-538
Number of pages	4
Journal	Applied Physics Letters
Volume	30
Issue number	10
DOIs	https://doi.org/10.1063/1.89225
State	Published - 1977
Externally published	Yes

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title = "Barrier-controlled low-threshold pnpn GaAs heterostructure laser",

abstract = "Incorporation of GaAlAs potential barrier layers into the active regions of a heterostructure pnpn injection laser makes it possible to design Shockley diode lasers with low (3 kA/cm2) room-temperature threshold currents.",

author = "Lee, {C. P.} and A. Gover and S. Margalit and I. Samid and A. Yariv",

year = "1977",

doi = "10.1063/1.89225",

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AU - Yariv, A.

PY - 1977

Y1 - 1977

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Barrier-controlled low-threshold pnpn GaAs heterostructure laser

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